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MMDF3N04HDR2 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2N-CH 40V 3.4A 8SOIC. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for MMDF3N04HDR2
- Description：MOSFET 2N-CH 40V 3.4A 8SOIC
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：3.4A
- Rds On (Max) @ Id, Vgs：80mOhm @ 3.4A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：28nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：900pF @ 32V
- Power - Max：1.39W
- Operating Temperature：-
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for MMDF3N04HDR2
FET, MOSFET Arrays Overview
The MMDF3N04HDR2 is a dual N-channel Power MOSFET array manufactured by onsemi. It features an 80 mΩ typical drain-source on-resistance (RDS(on)) at a gate drive voltage of 10 V. The device supports a continuous drain current of 3.4 A and withstands a maximum drain-source voltage of 40 V. Packaged in an 8-SOIC surface-mount format, it integrates two independent N-channel transistors within a single compact housing to optimize board space.
FET, MOSFET Arrays Feature Summary
- Dual N-Channel Configuration
- Low On-Resistance for Efficiency
- Compact Surface-Mount Packaging
FET, MOSFET Arrays Applications
- DC-DC Converter Circuits
- Power Switching Applications
- Motor Control Systems
FET, MOSFET Arrays Procurement Notes
Verify the specific ordering suffix 'HDR2' against the official onsemi datasheet to confirm package dimensions and marking details. Ensure compliance with RoHS requirements as indicated in distributor records, noting potential lead content status. Cross-reference the manufacturer part number with authorized distribution channels to guarantee component authenticity and traceability.
FET, MOSFET Arrays Selection Notes
Select this component when a dual N-channel topology is required in a limited footprint. The 40 V rating suits low-voltage power management systems. Evaluate the 3.4 A continuous current capability against thermal constraints. Confirm that the 80 mΩ RDS(on) meets efficiency targets for the intended load conditions.
FET, MOSFET Arrays Part Context
This device belongs to the Power MOSFET array category from onsemi. It consolidates two discrete transistors into one package, reducing assembly complexity compared to using separate components. The SO-8 form factor provides a balance between thermal performance and size for consumer and industrial electronics.
FET, MOSFET Arrays Replacement Considerations
Consult the official onsemi cross-reference documentation for verified substitute part numbers. Do not assume functional equivalence based solely on matching electrical parameters such as voltage or current ratings without verifying pinout compatibility and package specifications.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
