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The MMDT2222A-7 is a dual NPN small signal surface mount transistor manufactured by Diodes Incorporated. It utilizes epitaxial planar die construction and is housed in an ultra-small SOT-363 package. The device features a collector-emitter voltage (VCEO) of 40 V, a collector-base voltage (VCBO) of 75 V, and a continuous collector current (IC) of 600 mA. Maximum power dissipation is rated at 200 mW with a thermal resistance of 625 °C/W. The transition frequency (fT) reaches 300 MHz, and the operating temperature range spans from -55°C to +150°C.
Verify the specific ordering suffix when sourcing components. The base part number MMDT2222A denotes the standard version, while adding the -F suffix indicates a lead-free and RoHS-compliant variant. Confirm packaging details such as tape and reel quantities against official distributor documentation before finalizing procurement orders.
Select this component for designs requiring two matched NPN transistors in a minimal footprint. Ensure the circuit operates within the 40 V collector-emitter voltage limit and 600 mA continuous current rating. Consider the 200 mW power dissipation constraint and the need for adequate PCB pad layout to manage thermal resistance effectively during operation.
This component belongs to the MMDT2222 series of dual NPN transistors produced by Diodes Incorporated. It serves as a complementary counterpart to PNP types like the MMDT2907A. The device is designed for general-purpose use in consumer electronics and industrial equipment where space-saving surface mount technology is required.
Direct replacements include other dual NPN transistors in the SOT-363 package with matching electrical characteristics. Verify pinout compatibility and ensure that voltage, current, and power ratings meet or exceed the original specifications.