MMDT2907A-7-F

$0.32

Description：TRANS 2PNP 60V 600MA SOT-363
Series：-

SKU:18b5dce1c2df Category: Bipolar Transistor Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：TRANS 2PNP 60V 600MA SOT-363
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
Transistor Type：2 PNP (Dual)
Current - Collector (Ic) (Max)：600mA
Voltage - Collector Emitter Breakdown (Max)：60V
Vce Saturation (Max) @ Ib, Ic：1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max)：10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 150mA, 10V
Power - Max：200mW
Frequency - Transition：200MHz
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-TSSOP, SC-88, SOT-363
Supplier Device Package：SOT-363
Grade：-
Qualification：-

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MMDT2907A-7-F

Overview

The MMDT2907A-7-F is a dual PNP small signal transistor manufactured by Diodes Incorporated. It utilizes epitaxial planar die construction and is housed in an ultra-small SOT363 surface mount package. The device supports a collector-emitter voltage (VCEO) of -60 V and a collector-base voltage (VCBO) of -60 V, with a maximum continuous collector current (IC) of -600 mA. Power dissipation is rated at 200 mW, and the junction-to-ambient thermal resistance is 625 °C/W. The transition frequency (fT) reaches 200 MHz. Operating and storage temperatures range from -55°C to +150°C.

Feature Summary

Dual PNP configuration within an ultra-small SOT363 surface mount package
Epitaxial planar die construction for reliable performance
Qualified to AEC-Q101 standards for high reliability applications

Applications

Low power amplification circuits
General purpose switching applications

Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm compliance with RoHS directives and check for PPAP capability if automotive assembly processes require it. Ensure the marking code K2F matches the specific revision. Validate solderability against MIL-STD-208 standards before integration into production lines.

Selection Notes

Select this component when space constraints necessitate the SOT363 footprint while requiring dual PNP functionality. Consider the 200 mW power dissipation limit and 625 °C/W thermal resistance for adequate heat management. Verify that the -60 V voltage rating aligns with circuit requirements. Check hFE ranges across different collector currents to ensure sufficient gain for the intended application.

Part Context

This part belongs to the MMDT29 series of dual PNP transistors produced by Diodes Incorporated. It shares electrical characteristics with the MMDT2907AQ-7-F variant, which holds specific automotive qualifications. Both devices utilize identical silicon structures but differ in manufacturing process controls and documentation requirements.