MMDT2907AQ_R1_00001

Overview

The MMDT2907AQ_R1_00001 is a dual PNP general-purpose switching transistor manufactured by Panjit International Inc. It utilizes an epitaxial silicon planar design housed in an SOT-363 package. The device supports a collector-emitter voltage of -60V and a continuous collector current of -600mA. Maximum power dissipation is rated at 150mW, with a thermal resistance from junction to ambient of 830°C/W. The component operates within a temperature range of -55°C to +150°C for both storage and junction conditions.

Feature Summary

• Dual PNP configuration utilizing epitaxial silicon planar technology
• Compliant with EU RoHS 2011/65/EU directive and IEC61249 standards
• Halogen-free green molding compound construction

Applications

• General purpose switching circuits
• Low-power signal processing applications

Procurement Notes

Verify the specific ordering suffix against manufacturer documentation to confirm packaging details. Confirm that the SOT-363 package marking matches the specified 'M7Q' identifier. Ensure compliance requirements align with project specifications regarding halogen-free materials and environmental directives before finalizing procurement.

Selection Notes

Select this component when a dual PNP configuration is required in a compact surface-mount footprint. Evaluate the 150mW power dissipation limit and 830°C/W thermal resistance against the expected operating environment. Verify that the -60V breakdown voltage meets the circuit's maximum voltage requirements.

Part Context

This part belongs to the MMDT2907 series of dual PNP transistors produced by Panjit International Inc. The standard product designation is MMDT2907AQ, which is packaged on a 7-inch reel containing 3,000 pieces. The datasheet revision is dated May 27, 2016.

Replacement Considerations

MMDT2907AQ-7-F (Diodes Incorporated)