MMDT2907V-7

Overview

The MMDT2907V-7 is a dual PNP small signal transistor manufactured by Diodes Incorporated, housed in an SOT-563 surface-mount package. It features a collector-emitter voltage (VCEO) of -60 V and a maximum DC collector current (IC) of -600 mA. The device has a total power dissipation rating of 150 mW at +25°C ambient temperature. Electrical characteristics include a minimum DC current gain (hFE) of 75 to 100 depending on the operating point, a transition frequency (fT) of 200 MHz, and a collector-base breakdown voltage (BVCBO) of -60 V. Operating temperatures range from -55°C to +150°C.

Feature Summary

• Dual PNP configuration integrated into an ultra-small SOT-563 surface mount package for space-constrained designs.
• Qualified to AEC-Q101 standards for high reliability applications.
• Totally lead-free, fully RoHS compliant, and halogen and antimony free construction.

Applications

• General-purpose switching circuits
• Low-power amplification stages
• Automotive electronics requiring AEC-Q101 qualified components

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the standard reel packaging format when sourcing. Confirm that the required component marking code 'KAU' matches your assembly documentation requirements. Ensure compliance with moisture sensitivity level 1 handling procedures during storage and soldering processes.

Selection Notes

Select this component when a dual PNP transistor is required in a compact SOT-563 footprint. Verify that the -60 V voltage rating meets the circuit's peak reverse voltage requirements. Consider the 150 mW power dissipation limit and thermal resistance of 833 °C/W for adequate heat management in the final enclosure design.

Part Context

This part belongs to the MMDT29 series of dual transistors produced by Diodes Incorporated. It serves as the PNP counterpart to the MMDT2222V NPN dual transistor, allowing for complementary push-pull configurations within the same physical package size.

Replacement Considerations

Direct replacements must match the SOT-563-6 package and provide equivalent -60 V / -600 mA ratings. Verify pinout compatibility between C1/B2/E2/C2/E1/B1 arrangements before substitution.

FAQ

What is the ESD protection rating for the MMDT2907V-7?

The device is rated for 4,000 V under the Human Body Model (JEDEC Class 3A) and 400 V under the Machine Model.

Is the MMDT2907V-7 suitable for automotive applications?

Yes, the component is qualified to AEC-Q101 standards for high reliability, making it suitable for automotive environments.

What are the typical switching times for this transistor?

Typical turn-on delay time is 10 ns, rise time is 40 ns, turn-off storage time is 80 ns, and fall time is 30 ns under specified test conditions.