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The MMDT3904-7-F-79 is a dual NPN small-signal surface-mount transistor manufactured by Diodes Incorporated. It utilizes an epitaxial planar silicon die construction within a compact SOT-363 package. The device supports a maximum collector-emitter voltage of 40V and a continuous collector current of 200mA. Key electrical parameters include a transition frequency (fT) of 300MHz, a power dissipation rating of 200mW, and a DC current gain (hFE) ranging from 100 to 300 at specific test conditions. It operates within a temperature range of -55°C to +150°C.
Verify the exact suffix against official Diodes Incorporated documentation to confirm packaging specifications. Confirm RoHS compliance status and AEC-Q101 qualification requirements with the manufacturer before procurement. Ensure the ordering code matches the specific reel or cut tape format required for production assembly lines.
Select this component when a dual NPN configuration is required in a minimal footprint. Compare thermal resistance values against board layout constraints. Verify that the 200mA current limit and 40V voltage ratings exceed circuit demands. Consider the SOT-363 package dimensions for PCB space optimization compared to discrete single transistors.
This part belongs to the MMDT3904 series of dual NPN transistors. It serves as a compact alternative to using two separate single NPN transistors. The series is widely used in portable electronics and automotive systems where space efficiency and signal integrity are critical design factors.
Compatible substitutes include DMMT3904WQ-7-F and MMDT3904HE3-TP. Verify pinout compatibility and thermal characteristics before substitution.