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The MMDT3904 is a dual NPN transistor manufactured by Good-Ark Semiconductor, housed in a SOT-363 surface-mount package. It features a maximum collector-emitter voltage (VCEO) of 40 V and a continuous collector current (IC) of 200 mA. The device has a collector-base breakdown voltage (VCBO) of 60 V and an emitter-base breakdown voltage (VEBO) of 5 V. Maximum power dissipation is rated at 200 mW with a thermal resistance from junction to ambient of 625 °C/W. The transition frequency (fT) reaches 300 MHz, and the DC current gain ranges from 30 to 300 depending on operating conditions.
Verify the specific manufacturer marking code K6N against the physical component to confirm authenticity. Ensure the ordering suffix matches the required tape-and-reel quantity of 3000 pieces per reel. Confirm that the RoHS compliance status aligns with project environmental requirements before finalizing procurement orders.
Select this component when a dual NPN topology is required in a small footprint. Verify that the 40 V collector-emitter voltage and 200 mA current limits exceed the maximum circuit demands. Consider the 200 mW power dissipation limit and the resulting thermal resistance when designing heat management strategies for the PCB layout.
This part belongs to the MMDT series of dual bipolar junction transistors. It provides matched electrical characteristics between the two internal NPN transistors, which is beneficial for differential pairs or push-pull configurations. The SOT-363 package allows for automated surface-mount assembly, reducing board space compared to discrete individual transistors.
Check pinout compatibility if substituting with other dual NPN devices in SOT-363 packages. Verify that replacement parts meet the same 40 V VCEO and 200 mA IC ratings. Ensure the alternative component also offers comparable hFE ranges and fT specifications for equivalent performance.