MMDT3904

MMDT3904

$0.10
  • Description:TRANS 2NPN 40V 200MA SOT-363
  • Series:-

SKU:c22ee1721252 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS 2NPN 40V 200MA SOT-363
  • Series:-
  • Mfr:Good-Ark Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:2 NPN
  • Current - Collector (Ic) (Max):200mA
  • Voltage - Collector Emitter Breakdown (Max):40V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max):50nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 10mA, 1V
  • Power - Max:200mW
  • Frequency - Transition:300MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:SOT-363
  • Grade:-
  • Qualification:-

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MMDT3904

Overview

The MMDT3904 is a dual NPN transistor manufactured by Good-Ark Semiconductor, housed in a SOT-363 surface-mount package. It features a maximum collector-emitter voltage (VCEO) of 40 V and a continuous collector current (IC) of 200 mA. The device has a collector-base breakdown voltage (VCBO) of 60 V and an emitter-base breakdown voltage (VEBO) of 5 V. Maximum power dissipation is rated at 200 mW with a thermal resistance from junction to ambient of 625 °C/W. The transition frequency (fT) reaches 300 MHz, and the DC current gain ranges from 30 to 300 depending on operating conditions.

Feature Summary

  • Dual NPN configuration integrating two independent transistors within a single compact SOT-363 package for space-efficient circuit designs.
  • Epoxy material meets UL 94 V-0 flammability rating for enhanced safety compliance.
  • Lead-free finish and RoHS compliant construction suitable for environmentally regulated manufacturing processes.

Applications

  • General-purpose switching circuits
  • Audio frequency (AF) amplifier stages

Procurement Notes

Verify the specific manufacturer marking code K6N against the physical component to confirm authenticity. Ensure the ordering suffix matches the required tape-and-reel quantity of 3000 pieces per reel. Confirm that the RoHS compliance status aligns with project environmental requirements before finalizing procurement orders.

Selection Notes

Select this component when a dual NPN topology is required in a small footprint. Verify that the 40 V collector-emitter voltage and 200 mA current limits exceed the maximum circuit demands. Consider the 200 mW power dissipation limit and the resulting thermal resistance when designing heat management strategies for the PCB layout.

Part Context

This part belongs to the MMDT series of dual bipolar junction transistors. It provides matched electrical characteristics between the two internal NPN transistors, which is beneficial for differential pairs or push-pull configurations. The SOT-363 package allows for automated surface-mount assembly, reducing board space compared to discrete individual transistors.

Replacement Considerations

Check pinout compatibility if substituting with other dual NPN devices in SOT-363 packages. Verify that replacement parts meet the same 40 V VCEO and 200 mA IC ratings. Ensure the alternative component also offers comparable hFE ranges and fT specifications for equivalent performance.

MMDT3904MMDT3904
$0.10
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