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The MMDT3904Q-7-F is a dual NPN small signal transistor in an SOT363 package. It features a collector-emitter voltage (VCEO) of 40 V and a continuous collector current (IC) of 200 mA. The device has a power dissipation (PD) of 200 mW and a thermal resistance junction-to-ambient (RθJA) of 625 °C/W. DC current gain (hFE) ranges from 40 to 300 depending on the collector current. The transition frequency (fT) is 300 MHz. Operating temperature range is -55°C to +150°C.
Verify the component status is Active and the marking code matches K6N. Confirm the reel size is 7 inches with a quantity of 3,000 per reel. Ensure compliance with RoHS 2 and PPAP requirements if used in automotive assemblies. Check date code markings for year and month verification against production schedules.
Select this component when a dual NPN transistor is required in a compact SOT363 footprint. Consider the 40V VCEO rating and 200mA IC limit for circuit design. Verify that the 300MHz fT meets switching speed requirements. Ensure thermal management supports the 200mW dissipation limit in the intended ambient temperature environment.
This part belongs to Diodes Incorporated's small signal transistor portfolio. It utilizes epitaxial planar die construction. The SOT363 case provides a green molding compound with UL 94V-0 flammability rating. Terminals have a matte tin finish suitable for soldering per MIL-STD-202 Method 208.
Check for direct pin-compatible alternatives in the SOT363 package with similar 40V VCEO and 200mA IC ratings. Verify electrical characteristics like hFE and fT match application needs. Ensure any substitute also meets AEC-Q101 if automotive qualification is required.
The maximum collector-base voltage (VCBO) is 60 V.
Yes, it is qualified to AEC-Q101 standards and is PPAP capable.
It withstands 4,000 V via Human Body Model (JEDEC Class 3A) and 400 V via Machine Model.