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The MMDT3904S-TP is a dual NPN bipolar junction transistor array manufactured by Micro Commercial Components. It utilizes silicon technology and is housed in an SOT-363S-6 surface-mount package. The device supports a maximum continuous collector current of 200 mA and withstands a collector-emitter voltage of 40 V, with a collector-base voltage rating of 60 V and an emitter-base voltage limit of 6 V. Key electrical characteristics include a power dissipation capacity of 200 mW, a transition frequency of 250 MHz, and a minimum DC current gain of 30 at specified test conditions. The component operates within a temperature range from -55°C to +150°C.
Verify the specific suffix against official manufacturer documentation to confirm pinout compatibility and electrical tolerances. Ensure that the ordering information matches the exact package variant required for the target PCB layout. Cross-reference datasheet revisions to confirm compliance with current environmental standards before finalizing procurement orders.
Select this component when a dual NPN topology is required in a small outline transistor package. Compare the 250 MHz transition frequency against circuit bandwidth requirements. Verify that the 200 mA current rating exceeds peak load demands. Confirm thermal management strategies align with the 200 mW power dissipation limit under expected operating conditions.
This part belongs to the MMDT3904 series of dual NPN transistors produced by Micro Commercial Components. It shares core electrical specifications with variants like the MMDT3904V-TP but differs in physical packaging. The SOT-363S-6 package distinguishes it from other series members, requiring specific layout considerations during design integration.
MMDT3904V-TP offers identical electrical ratings but uses an SOT-563 package. MMDT3904HE3-TP provides similar performance in an SOT-363 package with AEC-Q101 automotive qualification. Verify pin-to-pin compatibility and package dimensions before substituting.