MMDT3904TB6_R1_00001

$0.28

Description：TRANS 2NPN 40V 200MA SOT-563
Series：-

SKU:d0914707c836 Category: Bipolar Transistor Arrays Brand: Panjit International Inc.

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Product introduction

Product Detailed Parameters

Description：TRANS 2NPN 40V 200MA SOT-563
Series：-
Mfr：Panjit International Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
Transistor Type：2 NPN (Dual)
Current - Collector (Ic) (Max)：200mA
Voltage - Collector Emitter Breakdown (Max)：40V
Vce Saturation (Max) @ Ib, Ic：300mV @ 5mA, 50mA
Current - Collector Cutoff (Max)：50nA
DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 10mA, 1V
Power - Max：225mW
Frequency - Transition：300MHz
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SOT-563, SOT-666
Supplier Device Package：SOT-563
Grade：-
Qualification：-

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MMDT3904TB6_R1_00001

Overview

The MMDT3904TB6_R1_00001 is a dual NPN general-purpose switching transistor manufactured by Panjit International Inc. It utilizes an epitaxial silicon planar design housed in a SOT-563 plastic case with a marking code of TX. The device supports a collector-emitter voltage (VCEO) of 40 V, a collector-base voltage (VCBO) of 60 V, and an emitter-base voltage (VEBO) of 6.0 V. Continuous collector current (IC) is rated at 200 mA, with maximum power dissipation (PTOT) of 225 mW. DC current gain (hFE) ranges from 40 to 300 at IC = 10 mA and VCE = 1.0 V. Operating temperatures span from -55°C to +150°C.

Feature Summary

Dual NPN configuration within a compact SOT-563 surface-mount package
Lead-free construction compliant with EU RoHS 2.0 standards
Green molding compound formulation adhering to IEC 61249 specifications

Applications

General purpose switching circuits
Low-voltage logic interface applications
Signal amplification stages

Procurement Notes

Verify the specific ordering suffix against official Panjit documentation to confirm packaging type and compliance status. Confirm that the component lot number is recorded for traceability purposes as required by the manufacturer's tracking policies. Ensure storage conditions remain within specified thermal limits prior to assembly.

Selection Notes

Select this component when a dual NPN configuration is required in a small footprint. Verify that the 40 V collector-emitter rating and 200 mA continuous current capability align with circuit requirements. Consider the 225 mW power dissipation limit and thermal resistance characteristics for proper heat management in the target application environment.

Part Context

This part belongs to the MMDT3904 series of dual NPN transistors produced by Panjit. It shares core electrical characteristics with other variants in the family but differs in packaging codes and reel configurations. The R1 suffix indicates a Tape and Reel packing type on a 7-inch plastic reel.