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Product Detailed Parameters
- Description：TRANS 2NPN 40V 200MA SOT-563
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：2 NPN (Dual)
- Current - Collector (Ic) (Max)：200mA
- Voltage - Collector Emitter Breakdown (Max)：40V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 5mA, 50mA
- Current - Collector Cutoff (Max)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 10mA, 1V
- Power - Max：200mW
- Frequency - Transition：300MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SOT-563
- Grade：-
- Qualification：-
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Overview
The MMDT3904VC-7 is a dual NPN small signal transistor housed in an SOT563 surface-mount package. It features a collector-emitter breakdown voltage (BVCEO) exceeding 40V and supports a high collector current of 200mA. The device utilizes epitaxial planar die construction for reliable performance. Key electrical parameters include a collector-base breakdown voltage of 60V, emitter-base breakdown voltage of 6.0V, and a DC current gain ranging from 40 to 300 depending on the operating point. Thermal characteristics specify a power dissipation of 150mW and a junction-to-ambient thermal resistance of 833°C/W. Operating temperatures range from -55°C to +150°C.
Feature Summary
- Dual NPN configuration within an ultra-small SOT563 surface-mount package
- High collector current capability of 200mA with BVCEO greater than 40V
- Totally lead-free, fully RoHS compliant, and halogen/antimony free green device
Applications
- Medium power amplification circuits
- General purpose switching applications
- Automotive electronics requiring specific change control protocols
Procurement Notes
Verify the ordering suffix '-7' corresponds to the standard APK marking code and 3000 units per reel quantity. Confirm compliance with EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2), and 2015/863/EU (RoHS 3). Ensure moisture sensitivity level 1 per J-STD-020 is acceptable for the assembly process. Check for AEC-Q100 qualification if automotive PPAP capability is required.
Selection Notes
Select this component when a compact dual NPN solution is needed for medium power tasks. The SOT563 package offers space savings compared to discrete transistors. Verify that the 150mW power dissipation limit at 25°C ambient temperature meets the thermal requirements of the target application. Consider the 833°C/W thermal resistance for heat management strategies.
Part Context
This part belongs to Diodes Incorporated's line of small signal transistors designed for general-purpose use. The MMDT3904VC variant specifically integrates two NPN transistors into a single SOT563 footprint. It serves as a compact alternative to using separate discrete components in space-constrained designs.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Consult Diodes Incorporated or authorized distributors for qualified alternatives.
