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The MMDT3906-7-F is a dual PNP small signal transistor manufactured by Diodes Incorporated. It features an epitaxial planar die construction housed in an SOT-363 surface mount package. The device supports a collector current of -200 mA and withstands collector-emitter and collector-base voltages up to -40 V. Power dissipation is rated at 200 mW, with an operating temperature range from -55°C to +150°C. Electrical characteristics include a DC current gain (hFE) ranging from 60 to 300 depending on the collector current, and a current gain-bandwidth product (fT) of 250 MHz.
Verify that the ordering suffix '-7-F' corresponds to the specified reel size of 7 inches, tape width of 8 mm, and quantity per reel of 3,000 units. Confirm compliance requirements such as AEC-Q101 qualification and 'Green' device status (halogen and antimony free) against specific project documentation before finalizing procurement.
Select this component when a dual PNP transistor is required in a compact SOT-363 footprint. Ensure the design accommodates the 200 mW power dissipation limit and the -40 V voltage ratings. Consider the complementary NPN type, MMDT3904, if matched pairs are needed for differential or push-pull configurations.
This part belongs to the MMDT3906 series of dual PNP transistors. It serves as the complementary counterpart to the MMDT3904 NPN type. The device utilizes epitaxial planar die construction and is designed specifically for applications demanding high reliability and small form factors in modern electronic assemblies.
The datasheet identifies the MMDT3904 as the complementary NPN type. No other direct substitute part numbers are documented in the provided source material.