MMDT3906Q-7

Overview

The MMDT3906Q-7 is a dual PNP small-signal transistor manufactured by Diodes Incorporated in an SOT363 surface-mount package. It features epitaxial planar die construction and supports a collector current of -200mA with a collector-emitter breakdown voltage of -40V. The device operates within a temperature range of -55°C to +150°C, dissipating up to 200mW. Key electrical parameters include a DC current gain (hFE) ranging from 60 to 300 depending on the collector current, a transition frequency (fT) of 250MHz, and saturation voltages of -0.25V at 10mA and -0.40V at 50mA.

Feature Summary

• Dual PNP configuration housed in an ultra-small SOT363 surface-mount package
• AEC-Q101 qualified for automotive applications requiring specific change control
• Totally lead-free, fully RoHS compliant, and halogen/antimony free

Applications

• Medium power amplification circuits
• General purpose switching applications
• Automotive electronic systems

Procurement Notes

Verify the component authenticity through authorized Diodes Incorporated distribution channels. Confirm that the received parts match the specified AEC-Q101 qualification status and IATF 16949 manufacturing standards required for automotive use. Ensure compliance with RoHS 3 directives and verify the packaging details align with the 3,000-unit reel specification.

Selection Notes

Select this component when a compact dual PNP solution is required for space-constrained designs. The SOT363 package offers a smaller footprint compared to standard SOT-23 configurations. Consider the -40V rating and -200mA current capability for low-power signal processing tasks. Verify thermal management requirements against the 625 °C/W junction-to-ambient resistance for steady-state operation.

Part Context

This part belongs to the MMDT3906 series of dual PNP transistors produced by Diodes Incorporated. It serves as the complementary counterpart to the NPN type MMDT3904Q. The Q suffix indicates AEC-Q101 qualification and PPAP capability, distinguishing it from non-automotive variants. It is designed for high-reliability environments utilizing green molding compounds.

Replacement Considerations

MMDT3904Q-7

FAQ

What is the ESD protection rating for the MMDT3906Q?

The device provides electrostatic discharge protection rated at 4000V under the Human Body Model (HBM) JEDEC Class 3A and 1000V under the Charged Device Model (CDM) C3.

How is the marking code structured on the SOT363 package?

The top view marking consists of 'K3N' representing the product type, followed by date code markings where the first character indicates the year and the second character indicates the month of manufacture.

What are the typical switching characteristics at room temperature?

At TA = +25°C with VCC = -3.0V, IC = -10mA, and IB = ±1.0mA, the delay time is 35ns, rise time is 35ns, storage time is 200ns, and fall time is 50ns.