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The MMDT3946-7-F is a complementary small-signal transistor array in an SOT-363 package, containing one NPN (3904-type) and one PNP (3906-type) device. The NPN section supports a collector-emitter voltage of 40V and continuous current up to 200mA, with a transition frequency of 300MHz. The PNP section provides a collector-emitter voltage of -40V and current capability of -200mA, operating at 250MHz. Total power dissipation is rated at 200mW, with an operating temperature range from -55°C to +150°C.
Verify the specific ordering suffix '-7-F' against official Diodes Incorporated documentation to confirm standard reel packaging specifications. Ensure that the component meets all applicable environmental directives, including RoHS 3 compliance and halogen-free requirements, prior to final procurement authorization.
Select this component when space-constrained designs require a matched complementary NPN/PNP pair. Verify that the required collector-emitter voltage ratings of 40V and maximum current of 200mA align with circuit demands. Confirm thermal management capabilities within the 200mW dissipation limit for the intended operating environment.
This part belongs to the MMDT3946 family of complementary small-signal transistors manufactured by Diodes Incorporated. It utilizes the SOT-363 surface-mount package to provide a compact solution for dual-transistor applications requiring both NPN and PNP elements on a single substrate.
MMDT3946Q
Pin 1 is Emitter 1 (PNP), Pin 2 is Base 1 (PNP), Pin 3 is Collector 1 (PNP), Pin 4 is Emitter 2 (NPN), Pin 5 is Base 2 (NPN), and Pin 6 is Collector 2 (NPN).
The maximum collector-base breakdown voltage (BVCBO) for the NPN section is 60V.
The NPN transistor has a transition frequency (fT) of 300MHz, while the PNP transistor has a transition frequency of 250MHz.