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The MMDT3946-7 is a complementary NPN/PNP small signal bipolar junction transistor (BJT) array manufactured by Diodes Incorporated. It integrates one 2N3904-type NPN and one 2N3906-type PNP transistor in a single surface-mount package. The device features an epitaxial planar die construction designed for low power amplification and switching applications. Key electrical parameters include a maximum collector current of 200 mA, a collector-emitter breakdown voltage of 40 V, and a transition frequency of 300 MHz. The unit operates within a temperature range of -55°C to +150°C junction temperature.
Verify the specific suffix against official Diodes Incorporated documentation to confirm packaging and compliance details. Ensure the component meets RoHS requirements if applicable to your design. Cross-reference datasheet revisions to confirm pinout consistency with existing schematics before finalizing procurement.
Select this component for designs requiring matched complementary pairs in minimal board space. Verify that the 200 mA continuous collector current and 40 V breakdown voltage meet circuit demands. Consider the SOT-363 or equivalent package constraints for thermal management and layout density.
This part belongs to the MMDT series of complementary bipolar transistors from Diodes Incorporated. It serves as a surface-mount alternative to through-hole discrete pairs like the 2N3904/2N3906 combination. The series is engineered for high-density PCB layouts where space efficiency and matched transistor characteristics are critical.
Publicly confirmed substitutes include MMDT3946-7-F and MMDT3946LP4-7. Verify pinout compatibility and electrical specifications before substitution.