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Product Detailed Parameters
- Description：TRANS NPN/PNP 40V 200MA SOT-363
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：1 NPN, 1 PNP Complementary
- Current - Collector (Ic) (Max)：200mA
- Voltage - Collector Emitter Breakdown (Max)：40V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA
- Current - Collector Cutoff (Max)：50nA
- DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 10mA, 1V
- Power - Max：200mW
- Frequency - Transition：300MHz, 250MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SOT-363
- Grade：-
- Qualification：-
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Overview
The MMDT3946-7R-F is a complementary small-signal transistor pair in an SOT-363 package, integrating one NPN (3904-type) and one PNP (3906-type) device. The NPN section supports a collector current of 200 mA with a collector-emitter voltage of 40 V and a transition frequency of 300 MHz. The PNP section provides a collector current of -200 mA, a collector-emitter voltage of -40 V, and a transition frequency of 250 MHz. Total power dissipation is rated at 200 mW, with an operating temperature range from -55°C to +150°C.
Feature Summary
- Complementary NPN/PNP configuration within a single ultra-small surface-mount package
- Epitaxial planar die construction for reliable switching and amplification
- Totally lead-free and fully RoHS compliant with halogen and antimony-free green materials
Applications
- Low power amplification circuits
- General purpose switching applications
- Digital logic interface circuits
Procurement Notes
Verify the specific ordering suffix against official Diodes Incorporated documentation to confirm packaging details. Confirm that the component meets all applicable environmental directives and regulatory standards required for the intended manufacturing process before finalizing procurement orders.
Selection Notes
Select this component when space-constrained designs require matched complementary transistor pairs. Ensure the application operates within the specified 200 mA current limits and 200 mW total power dissipation constraints. Verify thermal management requirements for high ambient temperatures or dense PCB layouts.
Part Context
This part belongs to the MMDT3946 family of complementary small-signal transistors manufactured by Diodes Incorporated. It utilizes the SOT-363 surface-mount package to provide a compact solution for dual-transistor applications. The product line includes variants with different packaging configurations to suit various assembly needs.
Replacement Considerations
MMDT3946-7-F
FAQ
What is the maximum collector-base breakdown voltage for the NPN transistor?
The maximum collector-base breakdown voltage (BVCBO) for the NPN section is 60 V.
Does the MMDT3946-7R-F meet automotive compliance standards?
No, the standard MMDT3946-7R-F is not automotive-compliant. An automotive-compliant version is available under the separate part number MMDT3946Q.
What is the typical storage temperature range for this device?
The storage temperature range (TSTG) is -55°C to +150°C.
