MMDT3946FL3-7

$0.31

Description：TRANS NPN/PNP 40V X2-DFN1310-6
Series：-

SKU:acdae562b275 Category: Bipolar Transistor Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：TRANS NPN/PNP 40V X2-DFN1310-6
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
Transistor Type：1 NPN, 1 PNP Complementary
Current - Collector (Ic) (Max)：200mA
Voltage - Collector Emitter Breakdown (Max)：40V
Vce Saturation (Max) @ Ib, Ic：300mV @ 5mA, 50mA
Current - Collector Cutoff (Max)：50nA
DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 10mA, 1V
Power - Max：370mW
Frequency - Transition：300MHz
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-XFDFN Exposed Pad
Supplier Device Package：X2-DFN1310-6 (Type B)
Grade：-
Qualification：-

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MMDT3946FL3-7

Overview

The MMDT3946FL3-7 is a complementary NPN-PNP small-signal transistor in an X2-DFN1310-6 package. It integrates one 3904-type NPN and one 3906-type PNP die. The NPN collector-emitter breakdown voltage is 40V with a maximum collector current of 200mA. The PNP collector-emitter breakdown voltage is -40V with a maximum collector current of -200mA. Total power dissipation is 370mW at +25°C ambient temperature. The transition frequency is 300MHz for both devices. Operating junction temperature ranges from -55°C to +150°C.

Feature Summary

Complementary pair integrating one 3904-type NPN and one 3906-type PNP
Ultra-small surface-mount X2-DFN1310-6 package
Epitaxial planar die construction
Totally lead-free, fully RoHS compliant, and halogen/antimony free

Applications

Low-power amplification
Switching applications

Procurement Notes

Verify component authenticity through authorized Diodes Incorporated channels or certified distributors. Confirm the obsolete status and discontinuation notice before finalizing procurement plans. Ensure compliance with EU RoHS directives and material specifications during acquisition.

Selection Notes

Select this component for designs requiring a matched complementary pair in a minimal footprint. Verify that the 40V collector-emitter voltage rating meets circuit requirements. Check thermal resistance and derating curves for adequate heat dissipation within the specified operating temperature range.

Part Context

This part belongs to the MMDT3946 series of complementary small-signal transistors manufactured by Diodes Incorporated. It utilizes epitaxial silicon planar technology designed for high-density surface-mount applications.