MMDT3946LP4-7

MMDT3946LP4-7

$0.32
  • Description:TRANS NPN/PNP 40V DFN1310H4-6
  • Series:-

SKU:6d7272aabce3 Category: Brand:

  
  • Quantity
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    • +
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Product Detailed Parameters

  • Description:TRANS NPN/PNP 40V DFN1310H4-6
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:1 NPN, 1 PNP
  • Current - Collector (Ic) (Max):200mA
  • Voltage - Collector Emitter Breakdown (Max):40V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 10mA, 1V
  • Power - Max:200mW
  • Frequency - Transition:300MHz, 250MHz
  • Operating Temperature:-
  • Mounting Type:Surface Mount
  • Package / Case:6-SMD, No Lead
  • Supplier Device Package:DFN1310H4-6
  • Grade:-
  • Qualification:-

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MMDT3946LP4-7

Overview

The MMDT3946LP4-7 is a complementary surface mount transistor array manufactured by Diodes Incorporated, integrating one NPN 2N3904 and one PNP 2N3906 die within a single DFN1310H4-6 package. The device features epitaxial planar construction with maximum collector currents of ±200 mA and collector-emitter breakdown voltages of 40 V for both sections. It offers a current gain-bandwidth product up to 300 MHz for the NPN section and 250 MHz for the PNP section. The component supports automated assembly processes and operates within an ambient temperature range suitable for general-purpose switching applications.

Feature Summary

  • Complementary pair configuration combining NPN 2N3904 and PNP 2N3906 transistors in a compact footprint
  • Epitaxial planar die construction designed for high reliability and automated assembly integration
  • Lead-free plating finish compliant with RoHS standards and utilizing green molding compounds

Applications

  • General-purpose signal switching circuits
  • Low-power amplifier stages requiring matched complementary pairs
  • Digital logic interface and level shifting applications

Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to confirm packaging quantities and reel specifications. Ensure that the procurement channel sources components directly from authorized distributors to guarantee authenticity and adherence to the stated moisture sensitivity levels. Confirm that the delivered parts match the DFN1310H4-6 mechanical dimensions provided in the datasheet.

Selection Notes

Select this component when space constraints require a dual-transistor solution in a small outline package. The DFN1310H4-6 form factor provides thermal performance adequate for low-power dissipation requirements up to 200 mW. Consider the specific hFE ranges and saturation voltages for both NPN and PNP sections to ensure compatibility with the target circuit's drive capabilities and switching speed requirements.

Part Context

This part belongs to the MMDT3946LP series of complementary bipolar junction transistors produced by Diodes Incorporated. The LP4 variant specifically denotes the DFN1310H4-6 surface mount package configuration. The -7 suffix indicates the standard tape and reel shipping quantity defined by the manufacturer for automated production line integration.

Replacement Considerations

Direct replacements must maintain the NPN/PNP complementary structure and similar electrical ratings. Verify pinout compatibility between the DFN1310H4-6 package and potential substitute packages. Cross-reference specific parameters such as VCEO, IC, and fT to ensure functional equivalence in the intended application environment.

MMDT3946LP4-7MMDT3946LP4-7
$0.32
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