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The MMDT3946V-TP is a dual bipolar junction transistor (BJT) array manufactured by Micro Commercial Components. It integrates one NPN and one PNP transistor within a single SOT-563 surface-mount package. The device supports a maximum collector current of 200mA and withstands a collector-emitter breakdown voltage of 40V. Key electrical specifications include a transition frequency of 300MHz, a maximum power dissipation of 200mW, and a minimum DC current gain of 100 at 10mA with 1V Vce. The component operates across a junction temperature range of -55°C to 150°C and holds AEC-Q101 automotive qualification.
Verify the specific suffix 'V' against the manufacturer datasheet to confirm package type and pinout alignment. Ensure the selected distributor provides traceable documentation confirming AEC-Q101 certification status. Cross-reference the RoHS3 compliance declaration with current regulatory requirements before finalizing procurement orders.
Select this component when space-constrained designs require matched NPN/PNP pairs. The SOT-563 package offers thermal performance suitable for 200mW dissipation. Verify that the 40V rating meets circuit voltage headroom requirements. Confirm compatibility with standard surface-mount reflow profiles during assembly planning.
This part belongs to the MMDT39xx series of complementary transistor arrays from MCC. It serves as a functional alternative to discrete NPN and PNP pairs, reducing board space. The V-TP suffix indicates specific packaging and tape-and-reel handling characteristics defined by the manufacturer for automated assembly processes.
MMDT3946HE3-TP: Complementary NPN/PNP array in SOT-363 package with similar 40V/200mA ratings.