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The MMDT4126-7 is a dual PNP small signal surface mount transistor manufactured by Diodes Incorporated. It features epitaxial planar die construction and operates within an ambient temperature range of -55°C to +150°C. The device provides a maximum collector-base voltage (VCBO) and collector-emitter voltage (VCEO) of -25 V, with an emitter-base voltage (VEBO) limit of -4.0 V. Continuous collector current is rated at -200 mA, while total power dissipation reaches 200 mW. The component utilizes a SOT-363 package and offers a current gain-bandwidth product (fT) of 250 MHz.
Verify the specific ordering suffix when purchasing components. The standard part number includes a tape and reel packaging format. Lead-free versions require adding a specific suffix to the base part number. Confirm moisture sensitivity levels and terminal solderability requirements against project specifications before finalizing orders.
Select this component for designs requiring dual PNP transistors in a minimal footprint. Ensure thermal management aligns with the specified junction-to-ambient resistance values. Verify that operating voltages remain within the -25 V breakdown limits. Consider the SOT-363 pad layout guidelines provided by the manufacturer for optimal PCB integration.
This component belongs to the MMDT series of dual transistors produced by Diodes Incorporated. It serves as a compact solution for replacing discrete dual-transistor setups in space-constrained electronics. The series includes complementary variants for different polarity requirements.
MMDT4124 is the complementary NPN type variant within the same product family.