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The MMDT4401-7-F is a dual NPN small signal transistor manufactured by Diodes Incorporated, housed in an SOT363 surface-mount package. It features a maximum collector-emitter voltage (VCEO) of 40 V and a continuous collector current (IC) of 600 mA. The device supports a power dissipation (PD) of 200 mW at +25°C with a thermal resistance (RθJA) of 625 °C/W. Electrical characteristics include a DC current gain (hFE) ranging from 20 to 300 depending on the operating current, a transition frequency (fT) of 250 MHz, and a collector-base breakdown voltage (BVCBO) of 60 V. Operating temperatures range from -55°C to +150°C.
Verify the specific ordering suffix when sourcing components. The provided datasheet identifies the reel-packaged variant as MMDT4401-7-F. Confirm that the received part matches this designation to ensure correct packaging quantity and carrier specifications. Cross-reference the manufacturer's official documentation for any updates regarding lead-free status or environmental compliance definitions.
Select this component for applications requiring two matched NPN transistors in a minimal footprint. Ensure the design accommodates the 200 mW power dissipation limit and the 625 °C/W thermal resistance under expected ambient conditions. Verify that the required current gain falls within the specified hFE ranges for the target operating currents.
This component belongs to the MMDT4401 series of dual NPN small signal transistors produced by Diodes Incorporated. It serves as a compact alternative to discrete single transistors, utilizing the SOT363 package to reduce board space. An automotive-compliant version is available under the separate MMDT4401Q designation.
An automotive-grade equivalent is documented as MMDT4401Q. Verify if AEC-Q101 qualification is required for the target application before substituting standard commercial grade parts with automotive variants.