MMDT4401-7

MMDT4401-7

$0.46
  • Description:TRANS 2NPN 40V 600MA SOT-363
  • Series:-

SKU:bbc04528b0eb Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS 2NPN 40V 600MA SOT-363
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:2 NPN (Dual)
  • Current - Collector (Ic) (Max):600mA
  • Voltage - Collector Emitter Breakdown (Max):40V
  • Vce Saturation (Max) @ Ib, Ic:750mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 1V
  • Power - Max:200mW
  • Frequency - Transition:250MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:SOT-363
  • Grade:-
  • Qualification:-

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MMDT4401-7

Overview

The MMDT4401-7-F is a dual NPN small signal transistor manufactured by Diodes Incorporated, housed in an SOT363 surface-mount package. It features a maximum collector-emitter voltage (VCEO) of 40 V and a continuous collector current (IC) of 600 mA. The device supports a power dissipation (PD) of 200 mW at +25°C with a thermal resistance (RθJA) of 625 °C/W. Electrical characteristics include a DC current gain (hFE) ranging from 20 to 300 depending on the operating current, a transition frequency (fT) of 250 MHz, and a collector-base breakdown voltage (BVCBO) of 60 V. Operating temperatures range from -55°C to +150°C.

Feature Summary

  • Dual NPN configuration within an ultra-small SOT363 surface-mount package for space-constrained designs.
  • Epitaxial planar die construction optimized for low-power amplification and switching applications.
  • Fully compliant with RoHS directives and manufactured as a halogen- and antimony-free "Green" device.

Applications

  • Low-power amplification circuits
  • General-purpose switching applications

Procurement Notes

Verify the specific ordering suffix when sourcing components. The provided datasheet identifies the reel-packaged variant as MMDT4401-7-F. Confirm that the received part matches this designation to ensure correct packaging quantity and carrier specifications. Cross-reference the manufacturer's official documentation for any updates regarding lead-free status or environmental compliance definitions.

Selection Notes

Select this component for applications requiring two matched NPN transistors in a minimal footprint. Ensure the design accommodates the 200 mW power dissipation limit and the 625 °C/W thermal resistance under expected ambient conditions. Verify that the required current gain falls within the specified hFE ranges for the target operating currents.

Part Context

This component belongs to the MMDT4401 series of dual NPN small signal transistors produced by Diodes Incorporated. It serves as a compact alternative to discrete single transistors, utilizing the SOT363 package to reduce board space. An automotive-compliant version is available under the separate MMDT4401Q designation.

Replacement Considerations

An automotive-grade equivalent is documented as MMDT4401Q. Verify if AEC-Q101 qualification is required for the target application before substituting standard commercial grade parts with automotive variants.

MMDT4401-7MMDT4401-7
$0.46
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