SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The MMDT4401_R1_00001 is a dual NPN general-purpose switching transistor manufactured by Panjit International Inc. It utilizes an NPN epitaxial silicon planar design housed in a plastic SOT-363 case. The device supports a collector-emitter voltage of 40V and a continuous collector current of 600mA, with a maximum power dissipation of 225mW at 25°C. Electrical characteristics include a DC current gain ranging from 20 to 300 depending on the operating point, a collector-base breakdown voltage of 60V, and a current gain-bandwidth product of 250MHz. The component operates within a junction temperature range of -55°C to +150°C.
Verify the specific ordering suffix against official documentation to confirm packaging type and orientation. The R1 suffix indicates Tape and Reel packing on a 7-inch reel with RoHS compliance. Confirm mechanical mounting pad layouts and terminal solderability requirements per MIL-STD-750 Method 202 before integration into production lines.
Select this component when a dual NPN configuration is required in a compact SOT-363 package. Ensure the 40V collector-emitter voltage rating meets circuit requirements. Verify that the 600mA continuous collector current and 225mW power dissipation limits are sufficient for the intended thermal environment and load conditions.
This part belongs to the MMDT4401 series of dual NPN transistors produced by Panjit International Inc. The manufacturer offers various packing codes such as T/R, T/B, and Bulk Packing, identified by specific alphanumeric suffixes. The marking code for this device is M4A, facilitating identification during surface mount assembly processes.
Consult official datasheets for pin-compatible alternatives offering similar VCEO and IC ratings. Verify that any substitute maintains the SOT-363 footprint and matches the electrical parameters for hFE and saturation voltages to ensure circuit compatibility.