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The MMDT4401Q-7-F is a dual NPN small signal transistor manufactured by Diodes Incorporated. It features an epitaxial planar die construction and is housed in an SOT-363 surface-mount package. The device meets AEC-Q101 automotive standards with a collector-emitter voltage of 40V, collector-base voltage of 60V, and emitter-base voltage of 6V. Maximum DC collector current is 600mA, with power dissipation rated at 200mW. The gain-bandwidth product is 250MHz, and the minimum DC current gain is 40. Operating temperature ranges from -55°C to +150°C.
Verify component authenticity through authorized distribution channels. Confirm that the marking code matches K2X for this specific part number. Ensure packaging details align with the specified reel size and tape width requirements for automated assembly processes.
Select this component when dual NPN configurations are required in ultra-small surface mount packages. Consider the 40V collector-emitter rating and 600mA current capability for appropriate load conditions. Verify thermal management requirements against the 200mW power dissipation limit under expected operating temperatures.
This component belongs to the MMDT4401Q series designed specifically for automotive environments. It provides a compact solution for dual NPN applications requiring high reliability and compliance with strict automotive quality standards. The SOT-363 package allows for space-constrained PCB layouts while maintaining robust electrical performance.
MMDT4401-TP (Micro Commercial Components)
The maximum collector-base voltage is 60V.
Yes, the operating junction temperature range extends up to +150°C.
The device meets JEDEC Class 3A for Human Body Model ESD ratings at 4,000V.