MMDT4413-7-F

Overview

The MMDT4413-7-F is a complementary pair small signal transistor manufactured by Diodes Incorporated, integrating one NPN (4401-type) and one PNP (4403-type) transistor within a single SOT-363 package. The device utilizes epitaxial die construction for high reliability and meets AEC-Q101 automotive standards. It operates with a maximum collector current of 600 mA and supports a total power dissipation of 200 mW at 25°C ambient temperature. The junction-to-ambient thermal resistance is rated at 625 °C/W. Operating temperatures range from -65°C to +150°C. The component is fully RoHS compliant, halogen-free, and antimony-free.

Feature Summary

• Integrates two internally isolated transistors (NPN and PNP) in an ultra-small surface mount package
• Qualified to AEC-Q101 standards for high reliability applications
• Totally lead-free and fully RoHS compliant with halogen and antimony-free green device construction

Applications

• Medium power amplification circuits
• General purpose switching applications
• Automotive electronic systems requiring high reliability components

Procurement Notes

Verify the specific ordering suffix matches the required reel size and tape width specifications. Confirm that the date code marking aligns with project timeline requirements. Ensure compliance with moisture sensitivity level 1 handling procedures during assembly. Validate that the solder finish meets MIL-STD-202 method 208 criteria for your manufacturing process.

Selection Notes

Select this component when space constraints require dual polarity transistors in a minimal footprint. Consider the 200 mW total power dissipation limit and 625 °C/W thermal resistance for adequate heat management. Verify that the 600 mA continuous collector current rating satisfies the peak load requirements of the target circuit design.

Part Context

This part belongs to the MMDT series of complementary small signal transistors produced by Diodes Incorporated. It serves as a compact alternative to discrete NPN and PNP pairs, simplifying board layout. The internal architecture combines a 4401-type NPN transistor with a 4403-type PNP transistor, providing matched performance characteristics for push-pull or differential amplifier configurations.

Replacement Considerations

Direct replacements include the MMDT4413 without the suffix or other manufacturers' equivalents offering identical SOT-363 pinouts and electrical ratings. Verify that substitute parts maintain the same AEC-Q101 qualification status if used in automotive contexts.

FAQ

What are the absolute maximum voltage ratings for the integrated transistors?

The NPN section supports a Collector-Base Voltage (VCBO) of 60 V and a Collector-Emitter Voltage (VCEO) of 40 V. The PNP section supports a VCBO of -40 V and a VCEO of -40 V.

How is the power dissipation distributed between the two transistors?

The datasheet specifies a total device power dissipation (PD) of 200 mW. This value represents the combined thermal limit for both the NPN and PNP sections operating simultaneously under steady-state conditions.

What is the current gain-bandwidth product (fT) for each transistor type?

The NPN section has an fT of 250 MHz, while the PNP section has an fT of 200 MHz. These values are measured at specific collector currents and frequencies defined in the electrical characteristics tables.