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The MMDT4413-7-F is a complementary pair small signal transistor in an SOT-363 package, containing two internally isolated transistors: NPN (4401) and PNP (4403). The NPN section supports a collector-emitter voltage of 40V and continuous current up to 600mA. The PNP section provides -40V collector-emitter voltage and -600mA current capability. Total power dissipation is rated at 200mW with a thermal resistance of 625°C/W. Operating temperature ranges from -65°C to +150°C.
Verify the ordering suffix '-7-F' indicates the standard reel packaging configuration. Confirm compliance with EU Directives 2002/95/EC and 2011/65/EU for RoHS requirements. Ensure the device meets halogen and antimony-free specifications if green material compliance is required for the specific application environment.
Select this component when space constraints require a dual complementary transistor solution in a surface-mount format. Consider the 200mW total power dissipation limit and the 625°C/W thermal resistance for heat management. Verify that the 40V breakdown voltage and 600mA current ratings align with the circuit's maximum operating conditions.
This part belongs to Diodes Incorporated's complementary pair small signal transistor series. It integrates both NPN and PNP types into a single ultra-small SOT-363 package. The internal isolation between the two transistors allows for independent operation within compact designs.
MMDT4413Q-7-F
The MMDT4413 contains two internally isolated transistors: an NPN type designated as 4401 and a PNP type designated as 4403.
Yes, the device is qualified to AEC-Q101 standards, making it suitable for high-reliability automotive applications.
The total device power dissipation is rated at 200mW under still air conditions on a minimum recommended pad layout.