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The MMDT5112W is a surface-mount digital PNP transistor manufactured by Diotec Semiconductor, housed in an SOT-323 package. It features integrated bias resistors with typical values of R1=47 kΩ and R2=10 kΩ. The device supports a maximum collector-emitter voltage (VCEO) of -50 V and a continuous collector current (IC) of -100 mA. Power dissipation is rated at 200 mW, with an operating temperature range from -55°C to +150°C. Key electrical characteristics include a DC current gain (hFE) of 60 at -IC = 10 mA and -VCE = 5 V, a transition frequency (fT) of 250 MHz, and a collector-base cutoff current (ICBO) of 100 nA.
Verify the specific ordering suffix when purchasing. Standard versions are available without automotive qualifications. Suffixes such as -Q or -AQ indicate AEC-Q101 compliance or qualification respectively. Confirm that the required reliability standard matches the application environment before finalizing orders.
Select this component for designs requiring a compact PNP digital transistor with built-in biasing. Ensure the circuit operates within the -50 V collector-emitter voltage limit and -100 mA current rating. Verify thermal management capabilities, as power dissipation is limited to 200 mW. Check if automotive-grade AEC-Q101 variants are necessary for the target deployment.
This part belongs to the MMDT5110W through MMDT511NW series of SMD digital PNP transistors. All members share the same SOT-323 footprint and general electrical limits but differ in their internal resistor configurations. This series provides standardized solutions for replacing discrete transistor-resistor networks in space-constrained PCB layouts.
Direct substitutes within the same family include MMDT5110W, MMDT5111W, MMDT5113W, MMDT5114W, and MMDT511NW. These alternatives offer different resistor ratios while maintaining identical package dimensions and maximum ratings.