MMDT5112W

MMDT5112W

$0.03
  • Description:BIASED BJT SOT-323 PNP 22000OHM
  • Series:-

SKU:cbaa99d0e065 Category: Brand:

  
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Product Detailed Parameters

  • Description:BIASED BJT SOT-323 PNP 22000OHM
  • Series:-
  • Mfr:Diotec Semiconductor
  • Package:Bulk
  • Resistors Included:R1 and R2
  • Transistor Type:PNP - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):-
  • Resistor - Base (R1):22 kOhms
  • Resistor - Emitter Base (R2):22 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:-
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • Frequency - Transition:250 MHz
  • Power - Max:200 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SC-70, SOT-323
  • Supplier Device Package:SOT-323

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MMDT5112W

Overview

The MMDT5112W is a surface-mount digital PNP transistor manufactured by Diotec Semiconductor, housed in an SOT-323 package. It features integrated bias resistors with typical values of R1=47 kΩ and R2=10 kΩ. The device supports a maximum collector-emitter voltage (VCEO) of -50 V and a continuous collector current (IC) of -100 mA. Power dissipation is rated at 200 mW, with an operating temperature range from -55°C to +150°C. Key electrical characteristics include a DC current gain (hFE) of 60 at -IC = 10 mA and -VCE = 5 V, a transition frequency (fT) of 250 MHz, and a collector-base cutoff current (ICBO) of 100 nA.

Feature Summary

  • Integrates bias resistor combinations to reduce component count and save board space
  • Compliant with RoHS directives without exemptions and REACH regulations
  • Designed for commercial and industrial grade applications

Applications

  • Digital controls
  • Switching circuits
  • Signal processing

Procurement Notes

Verify the specific ordering suffix when purchasing. Standard versions are available without automotive qualifications. Suffixes such as -Q or -AQ indicate AEC-Q101 compliance or qualification respectively. Confirm that the required reliability standard matches the application environment before finalizing orders.

Selection Notes

Select this component for designs requiring a compact PNP digital transistor with built-in biasing. Ensure the circuit operates within the -50 V collector-emitter voltage limit and -100 mA current rating. Verify thermal management capabilities, as power dissipation is limited to 200 mW. Check if automotive-grade AEC-Q101 variants are necessary for the target deployment.

Part Context

This part belongs to the MMDT5110W through MMDT511NW series of SMD digital PNP transistors. All members share the same SOT-323 footprint and general electrical limits but differ in their internal resistor configurations. This series provides standardized solutions for replacing discrete transistor-resistor networks in space-constrained PCB layouts.

Replacement Considerations

Direct substitutes within the same family include MMDT5110W, MMDT5111W, MMDT5113W, MMDT5114W, and MMDT511NW. These alternatives offer different resistor ratios while maintaining identical package dimensions and maximum ratings.

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