MMDT5211W

Overview

The MMDT5211W is a surface-mount digital NPN transistor manufactured by Diotec Semiconductor, housed in an SOT-323 package. It integrates bias resistors to facilitate direct logic interfacing and simplify circuit design. The device supports a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current (IO) of 100 mA. Power dissipation is rated at 200 mW, with a junction temperature range from -55°C to +150°C. Electrical characteristics include a typical DC current gain (GI) of 35 at VO = 5 V and IO = 10 mA, and a transition frequency (fT) of 250 MHz.

Feature Summary

• Integrates bias resistors to reduce component count and save board space
• Compliant with RoHS directives without exemptions
• Meets REACH regulations and conflict minerals requirements

Applications

• Digital control circuits
• Switching applications
• Signal processing systems

Procurement Notes

Verify the specific ordering suffix when purchasing. Standard versions are commercial grade. Suffixes -Q indicate AEC-Q101 compliance, while -AQ denotes AEC-Q101 qualification. Confirm these suffixes match project reliability requirements before procurement.

Selection Notes

Select this component for low-voltage switching tasks requiring integrated base drive. Ensure the load current remains within the 100 mA limit. Verify that the required input resistance matches the internal R1 value of 10 kΩ specified for this part number variant.

Part Context

This component belongs to the MMDT5210W through MMDT5215W series of SMD digital NPN transistors. All variants share identical mechanical dimensions and maximum ratings but differ in their internal resistor configurations and specific electrical parameters such as DC current gain.

Replacement Considerations

Direct substitutes within the same family include MMDT5210W, MMDT5212W, MMDT5213W, MMDT5214W, and MMDT5215W. Cross-manufacturer replacements must be evaluated based on matching pinout, voltage ratings, and internal resistor values.