MMDT5212W

Overview

The MMDT5212W is an SMD digital NPN transistor manufactured by Diotec Semiconductor, housed in a SOT-323 package. It integrates bias resistors to facilitate cost and space savings. Key electrical parameters include a collector-emitter voltage (VCEO) of 50 V, a continuous collector current (IO) of 100 mA, and a power dissipation (Ptot) of 200 mW. The device features a typical input resistor R1 of 10 kΩ with a tolerance of ±30%. DC current gain (GI) ranges from 60 to unspecified maximums at VO = 5 V and IO = 10 mA. Transition frequency (fT) is typically 250 MHz at VO = 10 V and IO = 5 mA.

Feature Summary

• Integrates bias resistors for simplified circuit design and reduced component count
• Compliant with RoHS directives without exemptions, REACH regulations, and Conflict Minerals requirements

Applications

• Digital controls
• Switching applications
• Signal processing

Procurement Notes

Verify the specific ordering suffix when purchasing. Standard versions are commercial/industrial grade. Suffix -Q indicates AEC-Q101 compliance, while suffix -AQ denotes AEC-Q101 qualification. Confirm these distinctions with the supplier to ensure the correct reliability grade matches the application requirements.

Selection Notes

Select this component for designs requiring a compact NPN digital transistor with integrated base resistance. Ensure the 50 V voltage rating and 100 mA current capacity align with load requirements. Verify thermal management capabilities, as power dissipation is rated at 200 mW on a PCB with 3 mm² copper pads per terminal.

Part Context

This part belongs to the MMDT5210W through MMDT5215W series of SMD Digital NPN Transistors. Each variant in the series offers different integrated resistor values while maintaining identical mechanical dimensions and maximum ratings within the SOT-323 package.

Replacement Considerations

Direct substitutes within the same family include MMDT5210W, MMDT5211W, MMDT5213W, MMDT5214W, and MMDT5215W. These parts share the same package and electrical limits but differ in their internal resistor configurations.