MMDT5213W

MMDT5213W

$0.03
  • Description:BIASED BJT SOT-323 NPN 47000OHM
  • Series:-

SKU:b31d9722f35e Category: Brand:

  
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Product Detailed Parameters

  • Description:BIASED BJT SOT-323 NPN 47000OHM
  • Series:-
  • Mfr:Diotec Semiconductor
  • Package:Bulk
  • Resistors Included:R1 and R2
  • Transistor Type:NPN - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):-
  • Resistor - Base (R1):47 kOhms
  • Resistor - Emitter Base (R2):47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:-
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • Frequency - Transition:250 MHz
  • Power - Max:200 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SC-70, SOT-323
  • Supplier Device Package:SOT-323

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MMDT5213W

Overview

The MMDT5213W is a surface-mount digital NPN transistor manufactured by Diotec Semiconductor, housed in an SOT-323 package. It integrates bias resistors to facilitate direct logic interfacing and reduce component count. The device supports a maximum collector current of 100 mA and withstands collector-emitter voltages up to 50 V. Internal resistance values are specified as R1 at 47 kΩ and R2 at 10 kΩ. The unit features a DC current gain (GI) of 80 under standard test conditions and exhibits a transition frequency of 250 MHz. Power dissipation is rated at 200 mW, with an operating junction temperature range spanning from -55°C to +150°C.

Feature Summary

  • Integrated bias resistors enable simplified circuit design and space savings
  • Compliant with RoHS directives without exemptions
  • Adheres to REACH regulations and conflict mineral standards

Applications

  • Digital control systems
  • Switching applications
  • Signal processing circuits

Procurement Notes

Verify the specific suffix designation when ordering, as the base model may differ from automotive-grade variants. Confirm compliance requirements against project specifications before finalizing procurement. Ensure that the sourcing channel provides authentic documentation matching the manufacturer's official datasheet for the exact part number variant.

Selection Notes

Select this component when a compact NPN digital transistor with integrated biasing is required for low-voltage switching tasks. The 47 kΩ input resistor suits moderate drive currents, while the 10 kΩ output resistor aids in saturation performance. Evaluate thermal constraints carefully, as power dissipation relies on PCB copper pad area for adequate heat sinking during continuous operation.

Part Context

This component belongs to the MMDT5210W through MMDT5215W series, which share identical electrical ratings but vary in internal resistor configurations. The marking code D8 identifies this specific variant within the family. Other members include MMDT5210W through MMDT5215W, each offering distinct R1 and R2 combinations to suit different logic interface requirements.

Replacement Considerations

Direct substitutes within the same series include MMDT5210W, MMDT5211W, MMDT5212W, MMDT5214W, and MMDT5215W. Verify that the alternative part matches the required R1 and R2 values, as these differ across the series. Automotive-grade equivalents are available with -Q or -AQ suffixes if AEC-Q101 qualification is necessary.

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