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The MMDT5214W is an NPN Silicon Epitaxial Planar Digital Transistor manufactured by Diotec Semiconductor. It integrates bias resistors into a compact SOT-323 package to reduce board space and component count. The device supports a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current (IO) of 100 mA, with a total power dissipation (Ptot) of 200 mW at 25°C ambient temperature. Internal resistor values are R1 = 22 kΩ and R2 = 10 kΩ. The transition frequency (fT) is typically 250 MHz. Operating junction temperatures range from -55°C to +150°C.
Verify the specific ordering suffix when purchasing. Standard commercial versions lack automotive qualification. Suffixes such as -Q indicate AEC-Q101 compliance, while -AQ denotes AEC-Q101 qualification. Confirm these suffixes match project reliability requirements before finalizing orders.
Select this component for NPN digital switching tasks requiring integrated base drive resistors. Ensure the required collector current does not exceed 100 mA and the voltage rating remains within 50 V limits. Verify thermal management capabilities, as power dissipation is rated at 200 mW on a PCB with 3 mm² copper pads per terminal.
This part belongs to the MMDT521xW series of SMD digital transistors. Variants in this family differ primarily in their internal resistor configurations (R1 and R2 values). For example, the MMDT5210W uses 47kΩ/10kΩ resistors, while the MMDT5214W utilizes 22kΩ/10kΩ. All share the same physical package and electrical ratings.
Direct substitutes include other MMDT5214W variants from different manufacturers that specify identical NPN polarity, SOT-323 packaging, and 22kΩ/10kΩ internal resistor ratios. Verify pinout compatibility and thermal characteristics.