MMDT5214W

MMDT5214W

$0.03
  • Description:BIASED BJT SOT-323 NPN 10000OHM
  • Series:-

SKU:dbfd3b5092f6 Category: Brand:

  
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Product Detailed Parameters

  • Description:BIASED BJT SOT-323 NPN 10000OHM
  • Series:-
  • Mfr:Diotec Semiconductor
  • Package:Bulk
  • Resistors Included:R1 and R2
  • Transistor Type:NPN - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):-
  • Resistor - Base (R1):10 kOhms
  • Resistor - Emitter Base (R2):47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:-
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • Frequency - Transition:250 MHz
  • Power - Max:200 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SC-70, SOT-323
  • Supplier Device Package:SOT-323

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MMDT5214W

Overview

The MMDT5214W is an NPN Silicon Epitaxial Planar Digital Transistor manufactured by Diotec Semiconductor. It integrates bias resistors into a compact SOT-323 package to reduce board space and component count. The device supports a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current (IO) of 100 mA, with a total power dissipation (Ptot) of 200 mW at 25°C ambient temperature. Internal resistor values are R1 = 22 kΩ and R2 = 10 kΩ. The transition frequency (fT) is typically 250 MHz. Operating junction temperatures range from -55°C to +150°C.

Feature Summary

  • Integrates dual bias resistors (R1=22kΩ, R2=10kΩ) for simplified circuit design
  • Compact SOT-323 surface-mount package for space-constrained applications
  • High switching speed with typical transition frequency of 250 MHz
  • Compliant with RoHS directives and REACH regulations

Applications

  • Digital control circuits
  • General-purpose switching applications
  • Signal processing stages

Procurement Notes

Verify the specific ordering suffix when purchasing. Standard commercial versions lack automotive qualification. Suffixes such as -Q indicate AEC-Q101 compliance, while -AQ denotes AEC-Q101 qualification. Confirm these suffixes match project reliability requirements before finalizing orders.

Selection Notes

Select this component for NPN digital switching tasks requiring integrated base drive resistors. Ensure the required collector current does not exceed 100 mA and the voltage rating remains within 50 V limits. Verify thermal management capabilities, as power dissipation is rated at 200 mW on a PCB with 3 mm² copper pads per terminal.

Part Context

This part belongs to the MMDT521xW series of SMD digital transistors. Variants in this family differ primarily in their internal resistor configurations (R1 and R2 values). For example, the MMDT5210W uses 47kΩ/10kΩ resistors, while the MMDT5214W utilizes 22kΩ/10kΩ. All share the same physical package and electrical ratings.

Replacement Considerations

Direct substitutes include other MMDT5214W variants from different manufacturers that specify identical NPN polarity, SOT-323 packaging, and 22kΩ/10kΩ internal resistor ratios. Verify pinout compatibility and thermal characteristics.

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