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Product Detailed Parameters
- Description：TRANS 2PNP 150V 200MA SOT-363
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：2 PNP (Dual)
- Current - Collector (Ic) (Max)：200mA
- Voltage - Collector Emitter Breakdown (Max)：150V
- Vce Saturation (Max) @ Ib, Ic：500mV @ 5mA, 50mA
- Current - Collector Cutoff (Max)：50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：60 @ 10mA, 5V
- Power - Max：200mW
- Frequency - Transition：300MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SOT-363
- Grade：-
- Qualification：-
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Overview
The MMDT5401-7 is a dual PNP small-signal transistor manufactured by Diodes Incorporated in an SOT363 surface-mount package. It features epitaxial planar die construction and operates with a collector-emitter voltage of -150V and continuous collector current of -200mA. The device provides a DC current gain (hFE) ranging from 50 to 240 at -10mA, with a transition frequency (fT) up to 300MHz. Power dissipation is rated at 200mW under standard conditions. It is lead-free, RoHS compliant, and halogen-free.
Feature Summary
- Dual PNP configuration housed in an ultra-small SOT363 surface-mount package
- High voltage capability suitable for medium power amplification and switching applications
- Totally lead-free and fully RoHS compliant with halogen and antimony-free green construction
Applications
- Medium power amplification circuits
- General purpose switching applications
- Complementary NPN/PNP circuit designs using the MMDT5551 counterpart
Procurement Notes
Verify the specific ordering suffix when purchasing. The base part number MMDT5401 may be available in different packaging options. Confirm that the received component matches the required reel size and tape width specifications defined in the manufacturer's ordering information section to ensure compatibility with automated assembly equipment.
Selection Notes
Select this component for designs requiring high-voltage dual PNP transistors in compact footprints. Ensure the application stays within the -150V collector-emitter voltage limit and -200mA continuous current rating. Consider thermal resistance values when calculating power dissipation limits, as the 200mW rating depends on the PCB copper area and mounting conditions specified in the datasheet notes.
Part Context
This component belongs to the MMDT series of complementary small-signal transistors produced by Diodes Incorporated. It serves as the PNP half of a matched pair, designed to work alongside the NPN variant, the MMDT5551. The series utilizes epitaxial planar technology to provide reliable performance in space-constrained surface-mount applications requiring robust electrical characteristics.
Replacement Considerations
The MMDT5401Q is the automotive-compliant alternative to this component. Verify if the application requires AEC-Q101 qualification before selecting the Q-series version. Other generic dual PNP transistors in SOT363 packages may offer similar pinouts but require careful verification of voltage, current, and gain parameters to ensure functional equivalence.
FAQ
What is the maximum collector-base voltage for the MMDT5401?
The absolute maximum collector-base voltage (VCBO) is -160V.
Is there a complementary NPN version available?
Yes, the MMDT5551 is the complementary NPN type available from Diodes Incorporated.
What is the moisture sensitivity level of this device?
The device has a Moisture Sensitivity Level of 1 per J-STD-020.
