SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The MMDT5401HE3-TP is a dual PNP bipolar junction transistor array manufactured by Micro Commercial Components. It features a maximum collector current of 600 mA and a collector-emitter breakdown voltage of 150 V. The device operates within a temperature range of -55°C to +150°C TJ and has a power dissipation rating of 200 mW. Key electrical parameters include a DC current gain (hFE) of at least 100 at -10 mA and -5 V, a transition frequency of 100 MHz, and a saturation voltage of 500 mV at 50 mA. It is housed in a SOT-363 surface-mount package.
Verify the specific ordering suffix against official MCC documentation to confirm compliance requirements such as halogen-free status or specific packaging types. Ensure that the selected variant matches the required automotive qualification and package style for your design implementation.
Select this component when a dual PNP configuration is required in a compact SOT-363 footprint. Consider the 150 V breakdown voltage and 600 mA current limits for appropriate circuit loading. Verify thermal management needs given the 200 mW power dissipation rating in small outline packages.
This part belongs to the MMDT5401 series of dual PNP transistors from Micro Commercial Components. It is designed for applications requiring high voltage performance in a minimal surface-mount form factor. The HE3 designation indicates RoHS compliance and halogen-free materials.
Cross-reference with other MMDT5401 variants from different manufacturers ensuring identical pinout, voltage ratings, and package dimensions. Verify that substitute parts meet the same AEC-Q101 automotive qualification if required for the application.