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Product Detailed Parameters
- Description：TRANS 2NPN 160V 200MA SOT-363
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：2 NPN (Dual)
- Current - Collector (Ic) (Max)：200mA
- Voltage - Collector Emitter Breakdown (Max)：160V
- Vce Saturation (Max) @ Ib, Ic：200mV @ 5mA, 50mA
- Current - Collector Cutoff (Max)：50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：80 @ 10mA, 5V
- Power - Max：200mW
- Frequency - Transition：300MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SOT-363
- Grade：-
- Qualification：-
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Overview
The MMDT5551-7-F is a dual NPN high-voltage transistor manufactured by Diodes Incorporated in an SOT363 package. It features epitaxial planar die construction and operates within a temperature range of -55°C to +150°C. Key electrical parameters include a collector-base voltage (VCBO) of 180 V, a collector-emitter voltage (VCEO) of 160 V, and a continuous collector current (IC) of 200 mA. The device has a power dissipation rating of 200 mW at 25°C ambient temperature. DC current gain (hFE) ranges from 80 to 250 at IC = 10mA and VCE = 5.0V. The transition frequency (fT) is up to 300 MHz.
Feature Summary
- Dual NPN configuration housed in an ultra-small surface-mount SOT363 package for space-constrained designs.
- High-voltage capability with a 160V collector-emitter breakdown voltage suitable for demanding switching applications.
- Totally lead-free and fully RoHS compliant, also halogen and antimony free.
- Qualified to JEDEC standards for high reliability.
Applications
- Medium power amplification circuits
- General-purpose switching applications
Procurement Notes
Verify the specific ordering suffix '-7-F' corresponds to the standard reel packaging containing 3,000 units per carrier. Confirm that the required marking code 'K4N' matches your assembly documentation. Ensure compliance with the specified moisture sensitivity level and solderability requirements before integration into the production line.
Selection Notes
Select this component when a dual NPN configuration is required in a compact SOT363 footprint. Verify that the 160V VCEO rating meets the circuit's maximum voltage requirements. Consider the 200mW power dissipation limit and thermal resistance values when designing the PCB layout to ensure operation within the specified junction temperature range.
Part Context
This part belongs to the MMDT5551 series of dual NPN transistors. It serves as a complementary counterpart to the PNP type MMDT5401. The device is designed for medium power amplification and switching tasks where high voltage tolerance and small form factor are critical design constraints.
Replacement Considerations
Direct parameter-equivalent replacements include the MMDT5551-TP from Micro Commercial Components. Designers should verify pinout compatibility and thermal characteristics when substituting with other manufacturers' dual NPN devices in the SOT363 package.
FAQ
What is the maximum collector-emitter voltage for the MMDT5551?
The maximum collector-emitter voltage (VCEO) is 160 V.
Is the MMDT5551-7-F suitable for automotive applications?
This specific part is not qualified for automotive use. For automotive applications requiring specific change control, refer to the related automotive grade (Q-suffix) parts listed on the manufacturer's website.
What is the ESD protection rating for this device?
The device offers Electrostatic Discharge Human Body Model (HBM) protection of 4,000 V (JEDEC Class 3A).
