MMDT5551-7

Overview

The MMDT5551-7-F is a dual NPN high-voltage transistor manufactured by Diodes Incorporated in an SOT363 surface-mount package. It features epitaxial planar die construction and operates within a collector-emitter voltage (VCEO) of 160 V and a collector-base voltage (VCBO) of 180 V. The device supports a continuous collector current (IC) of 200 mA with a power dissipation (PD) of 200 mW at +25°C, increasing to 320 mW under specific mounting conditions. Electrical characteristics include a DC current gain (hFE) ranging from 80 to 250 at IC = 10mA, and a transition frequency (fT) between 100 MHz and 300 MHz. Operating temperatures range from -55°C to +150°C.

Feature Summary

• Dual NPN configuration housed in an ultra-small SOT363 surface-mount package for space-constrained designs.
• High-voltage capability suitable for medium power amplification and switching applications.
• Totally lead-free, fully RoHS compliant, and halogen/antimony free 'Green' device construction.

Applications

• Medium power amplification circuits
• General-purpose switching applications
• Automotive electronics requiring high reliability

Procurement Notes

Verify the exact ordering suffix against official documentation before procurement. The standard reel quantity is 3,000 units. Confirm that the required packaging format matches the available carrier options. Ensure compliance with specified environmental standards such as RoHS and halogen-free requirements during the sourcing process.

Selection Notes

Select this component when a dual NPN configuration with high-voltage ratings is required in a compact footprint. Evaluate thermal resistance values based on the intended PCB copper layout and airflow conditions. Verify that the maximum operating temperature and power dissipation limits align with the system's thermal management capabilities.

Part Context

This part belongs to the MMDT5551 series of dual NPN transistors designed for high-voltage applications. It serves as a complementary counterpart to PNP devices like the MMDT5401. The product is qualified to JEDEC standards for high reliability and is suitable for automotive applications meeting specific quality control requirements.

Replacement Considerations

Direct replacement parts include the MMDT5551-TP from Micro Commercial Components. Other compatible alternatives may be found within the same manufacturer's lineup or equivalent high-voltage dual NPN transistors from other suppliers.

FAQ

What is the maximum collector-emitter breakdown voltage?

The maximum collector-emitter breakdown voltage (BVCEO) is 160 V.

Is this component suitable for automotive applications?

Yes, it is suitable for automotive applications requiring specific change control, provided the appropriate automotive grade (Q-suffix) part is selected if AEC-Q qualification is strictly required.

What is the typical DC current gain at low current?

The DC current gain (hFE) ranges from 80 to 250 when the collector current is 10 mA and VCE is 5.0 V.