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Product Detailed Parameters
- Description：TRANS 2NPN 80V 500MA SOT-26
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：2 NPN (Dual)
- Current - Collector (Ic) (Max)：500mA
- Voltage - Collector Emitter Breakdown (Max)：80V
- Vce Saturation (Max) @ Ib, Ic：250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max)：100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 10mA, 1V
- Power - Max：900mW
- Frequency - Transition：163MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-6
- Supplier Device Package：SOT-26
- Grade：-
- Qualification：-
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Overview
The MMDTA06-7 is an 80V dual NPN small signal surface mount transistor manufactured by Diodes Incorporated. It features a collector-base voltage (VCBO) of 100V, a collector-emitter voltage (VCEO) of 80V, and an emitter-base voltage (VEBO) of 6V. The device supports a continuous collector current (IC) of 500mA with a peak pulse current (ICM) of 1A. DC current gain (hFE) is specified at a minimum of 100 for both IC=10mA and IC=100mA conditions. Power dissipation is rated at 200mW linear derating factor of 1.6 mW/°C. Operating temperature range spans from -55°C to +150°C.
Feature Summary
- Dual NPN transistors integrated into a single SOT26 package to reduce footprint compared to two separate SOT23 devices
- Epitaxial planar die construction designed for low power amplification and switching applications
- Qualified to AEC-Q101 standards ensuring high reliability performance
Applications
- Low power amplification circuits
- General purpose switching applications
- Automotive electronics requiring AEC-Q101 qualified components
Procurement Notes
Verify the specific ordering suffix '-7' corresponds to the 3,000-unit reel packaging configuration as documented in the manufacturer's ordering information. Confirm that the component marking 'A06' matches the intended product type code for this specific variant before finalizing procurement orders.
Selection Notes
Select this component when space constraints require a dual NPN configuration within a compact SOT26 footprint. Ensure the design accounts for the 80V collector-emitter breakdown voltage and 500mA continuous current limits. Verify thermal management requirements against the 200mW power dissipation rating under expected operating ambient temperatures.
Part Context
This part belongs to the MMDTA series of dual NPN transistors produced by Diodes Incorporated. It utilizes the SOT26 surface mount package, which houses two independent NPN transistors. The device is constructed using epitaxial planar technology and is fully RoHS compliant and halogen-free.
Replacement Considerations
Direct substitutes include other dual NPN transistors in SOT26 packages such as the MMDTA06Q-7-F or MMDTA06-7 variants. Verify pinout compatibility and electrical parameters like VCEO and hFE before substitution.
