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The MMDTA42-7-F is a dual NPN small-signal surface mount transistor manufactured by Diodes Incorporated. It features an epitaxial planar die construction housed in a SOT-26 package. Key electrical ratings include a collector-base voltage (VCBO) and collector-emitter voltage (VCEO) of 300 V, an emitter-base voltage (VEBO) of 6.0 V, and a continuous collector current (IC) of 500 mA. The device supports a power dissipation (Pd) of 300 mW with a thermal resistance (RθJA) of 417 °C/W. DC current gain (hFE) ranges from 25 to 40 depending on the collector current. The transition frequency (fT) is 50 MHz, and it operates within a temperature range of -55°C to +150°C.
Verify component authenticity through authorized Diodes Incorporated distributors or certified suppliers. Confirm the date code marking 'K3M' matches the specific production batch. Ensure packaging integrity for tape and reel shipments containing 3000 units per reel. Check for compliance with RoHS directives and moisture sensitivity level 1 requirements before integration into sensitive PCB assemblies.
Select this component for designs requiring high voltage isolation in a dual transistor format. The 300 V rating suits applications exceeding standard low-voltage logic levels. Consider the 300 mW power dissipation limit when designing thermal management strategies. The SOT-26 footprint requires appropriate pad layout as specified in application note AP02001 to ensure optimal thermal performance and mechanical stability.
This part belongs to the MMDTA42 series of dual NPN transistors. It serves as a complementary or paired solution for circuits needing two matched NPN devices in a single package. The series is designed for general-purpose analog and digital switching tasks where space constraints favor surface mount technology over through-hole alternatives.
Public confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical parameters against potential alternatives before substitution.