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The MMIX1Y82N120C3H1 is a high-speed Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes XPT technology and belongs to the C3-Class series, designed for switching frequencies between 20 kHz and 50 kHz. The device features a single N-channel configuration housed in an SMDP-21 package with through-hole mounting capabilities. Key electrical parameters include a maximum collector-emitter voltage of 1200 V and a continuous collector current of 82 A at 25°C. The saturation voltage is specified at 2.6 V under test conditions of 15 V gate drive and 82 A collector current. Thermal performance includes a power dissipation rating of 470 W, with an operating temperature range from -55°C to +150°C.
Verify component authenticity against manufacturer documentation before integration. Confirm that the specific suffix denotes the correct packaging variant. Ensure thermal management solutions align with the 470 W dissipation rating. Check for recent product change notifications regarding material or process updates.
Select this component when designs require IGBTs capable of efficient operation above 20 kHz. Compare total loss profiles against standard C3 devices if lower frequency efficiency is prioritized over speed. Ensure gate driver capabilities support the required switching transitions within the specified voltage limits.
This part belongs to the IXYS MMIX1Y series of high-speed IGBTs. It shares the XPT technology foundation with other C3-class devices but is distinguished by its optimized switching speed for higher frequency applications. The SMPD package provides robust isolation and thermal performance suitable for industrial power electronics.
Direct replacements should be sought within the IXYS MMIX1Y series or equivalent high-speed IGBTs from other manufacturers offering similar 1200V/82A ratings in SMDP-21 packages. Verify pinout compatibility and thermal resistance values before substitution.