MMIX2F60N50P3

FET, MOSFET Arrays Overview

The MMIX2F60N50P3 is a dual N-channel Power MOSFET module manufactured by IXYS. It belongs to the Polar3 HiPerFET series, utilizing silicon technology for high-performance switching applications. The device features a dual configuration within a single package, offering two independent channels. Key electrical specifications include a drain-source breakdown voltage of 500 V and a continuous drain current rating of 60 A per channel. The on-state resistance is specified at 100 mOhms, with a typical gate charge of 96 nC. Operating temperatures range from -55°C to +150°C, ensuring reliability in demanding environments.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration providing two independent switching paths in a single module
• HiPerFET Polar3 technology optimized for low conduction losses and fast switching
• High thermal stability supporting operation up to 150°C junction temperature

FET, MOSFET Arrays Applications

• Industrial motor drives requiring compact dual-switch solutions
• Power supply circuits needing isolated or complementary channel management
• Inverter topologies utilizing space-efficient dual MOSFET modules

FET, MOSFET Arrays Procurement Notes

Verify the specific package type and pinout configuration against the official datasheet before integration, as module variants may differ in thermal pad design or lead arrangement. Confirm that the dual-channel isolation requirements match the application's electrical isolation needs. Ensure thermal interface materials are compatible with the module's base plate specifications for optimal heat dissipation performance.

FET, MOSFET Arrays Selection Notes

Select this component when a dual N-channel topology is required without occupying separate board areas for individual discrete packages. Consider the 100 mOhm on-resistance for efficiency calculations in medium-power applications. Evaluate the 96 nC gate charge against driver capabilities to ensure adequate switching speed. Compare thermal resistance characteristics against alternative single-channel modules to determine suitability for the specific heatsinking constraints.

FET, MOSFET Arrays Part Context

This part is part of IXYS' Polar3 HiPerFET family, designed for high-efficiency power conversion. It complements single-channel variants like the IXFH60N50P3 by offering integrated dual functionality. The module simplifies layout for bridge configurations or half-bridge applications where symmetry and matched parameters between channels are critical for balanced performance.

FET, MOSFET Arrays Replacement Considerations

Direct substitutes must be dual N-channel modules with matching 500V/60A ratings and similar on-resistance. Verify package dimensions and thermal characteristics to ensure mechanical compatibility. Cross-reference with other IXYS dual modules in the Polar3 series for potential drop-in replacements if pinouts align.