MMPQ3906R1

MMPQ3906R1

  • Description:TRANS 4PNP 40V 200MA 16-SOIC
  • Series:-

SKU:ca4ea1f77d24 Category: Brand:

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Product Detailed Parameters

  • Description:TRANS 4PNP 40V 200MA 16-SOIC
  • Series:-
  • Mfr:onsemi
  • Package:Bulk
  • Transistor Type:4 PNP
  • Current - Collector (Ic) (Max):200mA
  • Voltage - Collector Emitter Breakdown (Max):40V
  • Vce Saturation (Max) @ Ib, Ic:250mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max):50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:75 @ 10mA, 1V
  • Power - Max:200mW
  • Frequency - Transition:200MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:16-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:16-SOIC
  • Grade:-
  • Qualification:-

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MMPQ3906R1

Overview

The MMPQ3906R1 is a quad PNP bipolar junction transistor (BJT) array manufactured by onsemi. It integrates four independent PNP transistors within a single 16-pin SOIC surface-mount package. The device supports a maximum collector current of 200 mA and a collector-emitter breakdown voltage of 40 V. Key electrical specifications include a transition frequency of 200 MHz, a maximum power dissipation of 1 W, and a minimum DC current gain (hFE) of 100 at specified test conditions. The component operates reliably across an extended temperature range from -55°C to +150°C.

Feature Summary

  • Integrates four independent PNP transistors in a compact 16-SOIC package for space-constrained designs
  • Provides high switching speed with a 200 MHz transition frequency suitable for general-purpose applications
  • Supports robust thermal performance with a 1 W maximum power dissipation rating

Applications

  • General-purpose signal switching circuits
  • Logic interface and level shifting stages
  • Driver circuits for low-power loads

Procurement Notes

Verify the specific suffix R1 against official datasheets to confirm tape-and-reel packaging details. Ensure compatibility with standard 16-SOIC footprint dimensions during PCB layout. Confirm RoHS compliance status through manufacturer documentation prior to final procurement decisions.

Selection Notes

Select this component when multiple identical PNP switching functions are required in a limited board area. Compare the 1 W power dissipation against thermal constraints. Verify that the 40 V voltage rating exceeds peak circuit voltages. Consider the 200 MHz frequency limit for high-speed signal integrity requirements.

Part Context

This part belongs to the discrete semiconductor transistor category, specifically within the Bipolar Junction Transistor (BJT) arrays sub-classification. It serves as a multi-element alternative to using four separate single PNP transistors, simplifying assembly and reducing component count in dense electronic assemblies.

Replacement Considerations

Direct substitutes include the MMPQ3906TR-ND and MMPQ3906CT-ND variants offered by onsemi. These alternatives share identical electrical characteristics and pinout configurations but may differ in packaging format such as cut tape versus reel.

MMPQ3906R1MMPQ3906R1

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