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The Central Semiconductor MMPQ6502 TR13 is a surface-mount complementary silicon quad transistor housed in an SOIC-16 package. It integrates two NPN and two PNP transistors for general-purpose amplifier and switching applications. Key electrical ratings include a collector-base voltage of 60 V, collector-emitter voltage of 30 V, and emitter-base voltage of 5.0 V. The device supports a continuous collector current of 1.0 A with a power dissipation of 1.0 W. Operating junction temperature ranges from -55°C to +150°C. Electrical characteristics specify a minimum hFE of 50 at 1.0 mA and a transition frequency (fT) of 200 MHz.
Verify the specific ordering suffix against official manufacturer documentation to confirm packaging details such as reel quantity or tape specifications. Ensure that the requested variant matches the exact part number required for the design. Cross-reference the datasheet revision date to confirm the accuracy of the provided electrical parameters before finalizing procurement orders.
Select this component when a compact solution requiring both NPN and PNP transistors is needed for signal processing tasks. The SOIC-16 package facilitates automated surface-mount assembly. Evaluate the thermal resistance values to ensure adequate heat dissipation for the intended power levels in the target application environment.
This component belongs to the Central Semiconductor discrete transistor portfolio, which focuses on standard and specialized semiconductor devices. The company manufactures various forms including surface mount, through-hole, and bare die options. This specific quad transistor configuration consolidates multiple components into one footprint to simplify circuit board layout.
Publicly confirmed substitute part numbers are not available in the provided source material. Verify pin compatibility and electrical limits if considering alternative manufacturers.
The maximum collector-base voltage (V_CBO) is rated at 60 V.
The transition frequency (fT) is specified as 200 MHz under test conditions of V_CE=20V, I_C=50mA, and f=100MHz.
The package contains four transistors, consisting of two complementary pairs (two NPN and two PNP).