MMRF1011HSR5

Overview

The MMRF1011HSR5 is a pulse lateral N-channel RF power MOSFET manufactured by NXP Semiconductors. It operates within the L-band frequency range of 1200 to 1400 MHz. The device delivers a peak output power of 330 W at a drain voltage of 50 V. It is engineered for pulsed applications with duty cycles ranging from 1% to 12%. The component utilizes silicon technology and is supplied in a reel packaging format.

Feature Summary

• Designed specifically for high-power pulsed RF operations rather than continuous wave transmission.
• Optimized for L-band radar systems requiring significant peak power output.

Applications

• L-Band radar transmitters
• Pulsed RF signal generation

Procurement Notes

Verify current availability status as the product is listed as discontinued or archived. Confirm that the specific suffix indicates the correct reel packaging configuration. Ensure compatibility with existing thermal management solutions designed for this package type. Check for any updated environmental compliance documentation required for integration.

Selection Notes

Select this component when designing systems requiring 330 W peak power in the 1200-1400 MHz band. It is suitable for low-duty-cycle applications up to 12%. Consider the 50 V operating voltage requirement for biasing circuits. Evaluate thermal dissipation needs appropriate for pulsed operation profiles.

Part Context

This part belongs to the MMRF1011H family of L-band RF power MOSFETs. It shares specifications with the MMRF1011HR5 variant, differing primarily in packaging. The family targets military and commercial radar applications requiring robust pulsed performance.

Replacement Considerations

The MMRF1011HR5 is a documented related part number within the same family. Verify if the reel versus cut-tape packaging difference meets assembly requirements. No other direct substitutes are confirmed in the provided data.