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Product Detailed Parameters
- Description：TRANS BRT PNP 100MA 50V SOT23
- Series：*
- Mfr：onsemi
- Package：Cut Tape (CT),Bulk
- Resistors Included：-
- Transistor Type：-
- Current - Collector (Ic) (Max)：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Resistor - Base (R1)：-
- Resistor - Emitter Base (R2)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- Vce Saturation (Max) @ Ib, Ic：-
- Current - Collector Cutoff (Max)：-
- Frequency - Transition：-
- Power - Max：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
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Overview
The MMUN2111LT1 is a PNP silicon Bias Resistor Transistor (BRT) from onsemi, housed in an SOT-23 package. It integrates a single transistor with a monolithic bias network consisting of two resistors: a series base resistor (R1) and a base-emitter resistor (R2). Both resistors have a nominal value of 10 kΩ, resulting in a typical resistor ratio of 1. The device supports a maximum collector current of 100 mA and a collector-emitter voltage of 50 Vdc. It features a minimum DC current gain (hFE) of 35 at 5.0 mA and operates within a temperature range of -55°C to +150°C.
Feature Summary
- Integrates a single PNP transistor with a monolithic bias network containing a series base resistor and a base-emitter resistor to replace external components.
- Designed for low power surface mount applications using the SOT-23 package, which can be soldered via wave or reflow processes.
Applications
- Replacing single devices and their external resistor bias networks to reduce system cost and board space.
- Low power surface mount digital switching circuits.
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging details. The standard LT1 variant is supplied in tape and reel format. Confirm RoHS compliance status if required by the design specifications. Ensure the component marking matches the datasheet table for accurate identification upon receipt.
Selection Notes
Select this component when a PNP digital transistor with a 10 kΩ input resistance is required. Verify that the 100 mA continuous collector current and 50 V breakdown voltage meet the circuit requirements. Consider the thermal dissipation limits relative to the PCB pad size during layout.
Part Context
This part belongs to the MMUN21xxLT1 series of preferred devices from onsemi. The series includes various configurations with different resistor values to suit diverse biasing needs while maintaining the same physical footprint and electrical characteristics.
Replacement Considerations
Compatible substitutes include other PNP BRTs with similar 10 kΩ resistor ratios, such as the MUN2111T1 or DTA114E. Verify pinout compatibility and ensure the replacement meets the 50 V and 100 mA ratings.
FAQ
What are the internal resistor values for the MMUN2111LT1?
The MMUN2111LT1 contains a series base resistor (R1) and a base-emitter resistor (R2), both with a nominal value of 10 kΩ.
What is the maximum operating temperature for this device?
The junction and storage temperature range for the MMUN2111LT1 extends up to +150°C.
How does the BRT simplify circuit design compared to discrete components?
The BRT eliminates the need for individual external bias resistors by integrating them into a single device, thereby reducing component count and board space.
