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The MMUN2111LT1G is a PNP Bias Resistor Transistor (BRT) featuring a monolithic bias network with R1 = 10 kΩ and R2 = 10 kΩ. It operates with a maximum collector-emitter voltage of 50 Vdc and continuous collector current of 100 mAdc. The device provides a minimum DC current gain (hFE) of 35 at IC = 5.0 mA, VCE = 10 V. Thermal characteristics include a total device dissipation of 246 mW at TA = 25°C in the SOT-23 package. Junction temperature range is -55 to +150 °C.
Verify the specific ordering suffix and package style against the manufacturer's current documentation. Confirm RoHS compliance and Pb-free status as indicated in the datasheet. Ensure the selected variant matches the required automotive qualification if applicable. Check for any discontinued status or recommended new design alternatives before finalizing procurement.
Select this component when a PNP digital transistor with a 1:1 resistor ratio is needed. Verify that the 50 V collector-emitter voltage rating meets the circuit requirements. Consider the SOT-23 package dimensions for PCB layout constraints. Evaluate thermal dissipation limits based on ambient temperature conditions.
This part belongs to the DTA114E/D family of Digital Transistors (BRT). It shares functional similarities with MUN2111, MMUN2111L, MUN5111, DTA114EE, and DTA114EM3. These devices all integrate bias resistors into a single transistor package to simplify design and reduce footprint.
Direct substitutes within the same family include MUN2111T1G (SC-59), MUN5111T1G (SC-70/SOT-323), and DTA114EET1G (SC-75). Verify pinout compatibility and package dimensions when substituting across different case styles.