MMUN2111LT1G

MMUN2111LT1G

$0.11
  • Description:TRANS PREBIAS PNP 50V SOT23-3
  • Series:-

SKU:4cb1715419c0 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS PNP 50V SOT23-3
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Resistors Included:R1 and R2
  • Transistor Type:PNP - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):10 kOhms
  • Resistor - Emitter Base (R2):10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:35 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:-
  • Power - Max:246 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SOT-23-3 (TO-236)

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MMUN2111LT1G

Overview

The MMUN2111LT1G is a PNP Bias Resistor Transistor (BRT) featuring a monolithic bias network with R1 = 10 kΩ and R2 = 10 kΩ. It operates with a maximum collector-emitter voltage of 50 Vdc and continuous collector current of 100 mAdc. The device provides a minimum DC current gain (hFE) of 35 at IC = 5.0 mA, VCE = 10 V. Thermal characteristics include a total device dissipation of 246 mW at TA = 25°C in the SOT-23 package. Junction temperature range is -55 to +150 °C.

Feature Summary

  • Integrates a single PNP transistor with a monolithic bias resistor network consisting of series base and base-emitter resistors.
  • Reduces board space and component count by replacing discrete devices and external resistor networks.
  • Simplifies circuit design through integrated biasing components.

Applications

  • General-purpose switching applications requiring simplified bias networks.
  • Automotive electronics utilizing NSV prefix variants for unique site and control change requirements.
  • Digital logic interfacing where compact surface-mount solutions are required.

Procurement Notes

Verify the specific ordering suffix and package style against the manufacturer's current documentation. Confirm RoHS compliance and Pb-free status as indicated in the datasheet. Ensure the selected variant matches the required automotive qualification if applicable. Check for any discontinued status or recommended new design alternatives before finalizing procurement.

Selection Notes

Select this component when a PNP digital transistor with a 1:1 resistor ratio is needed. Verify that the 50 V collector-emitter voltage rating meets the circuit requirements. Consider the SOT-23 package dimensions for PCB layout constraints. Evaluate thermal dissipation limits based on ambient temperature conditions.

Part Context

This part belongs to the DTA114E/D family of Digital Transistors (BRT). It shares functional similarities with MUN2111, MMUN2111L, MUN5111, DTA114EE, and DTA114EM3. These devices all integrate bias resistors into a single transistor package to simplify design and reduce footprint.

Replacement Considerations

Direct substitutes within the same family include MUN2111T1G (SC-59), MUN5111T1G (SC-70/SOT-323), and DTA114EET1G (SC-75). Verify pinout compatibility and package dimensions when substituting across different case styles.

MMUN2111LT1GMMUN2111LT1G
$0.11
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