MMUN2111LT3G

$0.11

Description：TRANS PREBIAS PNP 50V SOT23-3
Series：-

SKU:9aa894f5d689 Category: Single, Pre-Biased Bipolar Transistors Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：TRANS PREBIAS PNP 50V SOT23-3
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)
Resistors Included：R1 and R2
Transistor Type：PNP - Pre-Biased
Current - Collector (Ic) (Max)：100 mA
Voltage - Collector Emitter Breakdown (Max)：50 V
Resistor - Base (R1)：10 kOhms
Resistor - Emitter Base (R2)：10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce：35 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic：250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)：500nA
Frequency - Transition：-
Power - Max：246 mW
Grade：-
Qualification：-
Mounting Type：Surface Mount
Package / Case：TO-236-3, SC-59, SOT-23-3
Supplier Device Package：SOT-23-3 (TO-236)

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MMUN2111LT3G

Overview

The MMUN2111LT3G is a Bias Resistor Transistor (BRT) featuring an NPN silicon transistor integrated with a monolithic bias resistor network. It operates within a collector-emitter voltage range of 50 Vdc and supports a continuous collector current of 100 mAdc. The device incorporates a series base resistor (R1) of 10 kOhms and a base-emitter resistor (R2), maintaining a typical R1/R2 ratio of 1.0. Packaged in a surface-mount SOT-23 (SC-318) housing, it functions across a junction temperature range of -55°C to +150°C.

Feature Summary

Integrates a single NPN transistor with a dual-resistor bias network to replace discrete components
Reduces printed circuit board space and simplifies circuit design by eliminating external resistors
Manufactured using lead-free, halogen-free, and brominated flame retardant-free materials

Applications

General-purpose switching applications requiring simplified bias networks
Interface circuits for microcontrollers and logic gates
Driver stages for low-power loads in consumer electronics

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm package type and shipping quantity. Confirm RoHS compliance status and automotive qualification requirements if applicable to the target application environment before finalizing procurement specifications.

Selection Notes

Select this component when a compact NPN switching solution with built-in biasing is required. Ensure the maximum ratings for collector-base and collector-emitter voltages align with the system's operational limits. Verify that the thermal dissipation characteristics are sufficient for the intended ambient temperature conditions.

Part Context

This part belongs to the MUN2111 and MMUN2111L digital transistor series manufactured by onsemi. It shares functional similarities with other BRT devices like the DTA114E but differs in polarity and resistor values. The LT3G suffix indicates a specific tape and reel packaging configuration for automated assembly processes.