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Product Detailed Parameters
- Description：TRANS PREBIAS PNP 50V SOT23-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Bulk
- Resistors Included：R1 and R2
- Transistor Type：PNP - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：22 kOhms
- Resistor - Emitter Base (R2)：22 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：60 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic：250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：-
- Power - Max：246 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3 (TO-236)
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Overview
The MMUN2112LT1G is a PNP Bias Resistor Transistor (BRT) from onsemi, housed in an SOT-23 package. It integrates a single transistor with a monolithic bias network consisting of two resistors: a series base resistor and a base-emitter resistor. Key electrical parameters include a collector-base voltage (VCBO) of 50 Vdc, a collector-emitter voltage (VCEO) of 50 Vdc, and a continuous collector current (IC) of 100 mAdc. The device features a typical input resistance (R1) of 22 kOhms and a typical resistor ratio (R1/R2) of 1. Thermal characteristics specify a total device dissipation (PD) of 246 mW at 25°C ambient temperature.
Feature Summary
- Integrates a single PNP transistor with a monolithic bias network containing a series base resistor and a base-emitter resistor to replace discrete components.
- Designed for low power surface mount applications using the SOT-23 package, which supports wave or reflow soldering methods.
Applications
- Replacing single devices and external resistor bias networks in circuit designs.
- Low power surface mount applications requiring reduced board space and component count.
Procurement Notes
Verify the specific ordering suffix when purchasing. The 'LT1' designation indicates standard packaging, while the 'G' suffix denotes a lead-free package variant. Confirm the required shipping quantity, as the LT1 version is typically supplied in tape and reel quantities of 3000 units. Ensure compatibility with RoHS compliance requirements if applicable to the assembly process.
Selection Notes
Select this component when a PNP digital transistor with a 22 kOhm base resistor is required. Verify that the 50 V maximum voltage ratings and 100 mA current limits meet the application's operational demands. Consider the thermal dissipation capabilities relative to the expected ambient temperature and PCB pad configuration to ensure reliable operation within the specified junction temperature range.
Part Context
This part belongs to the MMUN21xxLT1 Series of Bias Resistor Transistors manufactured by onsemi. The series includes various PNP configurations with different integrated resistor values, all sharing the same SOT-23 package and fundamental BRT architecture designed to simplify circuit design and reduce system costs.
Replacement Considerations
Direct substitutes within the same family include MMUN2111LT1G, MMUN2113LT1G, and MMUN2114LT1G. These parts share identical pinouts and packages but feature different internal resistor ratios. Verify that the alternative resistor values align with the specific biasing requirements of the target circuit before substitution.
