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Product Detailed Parameters
- Description：TRANS PREBIAS PNP 50V SOT23-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 and R2
- Transistor Type：PNP - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：22 kOhms
- Resistor - Emitter Base (R2)：22 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：60 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic：250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：-
- Power - Max：246 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3 (TO-236)
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Overview
The MMUN2112LT1G is a single PNP digital transistor manufactured by onsemi, housed in an SOT-23-3 surface-mount package. It integrates a BJT with internal biasing resistors to simplify circuit design. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. The device features a typical input base resistor of 22 kOhms with a ratio of 1. DC current gain (hFE) is specified at a minimum of 60. Power dissipation is rated at 246 mW, and the unit operates within a temperature range of -55°C to +150°C.
Feature Summary
- Integrates a single PNP bipolar junction transistor with built-in biasing resistors for simplified switching applications.
- Designed for surface-mount technology using a compact SOT-23-3 package.
- Provides high DC current gain characteristics suitable for logic interfacing.
Applications
- General-purpose switching circuits
- Logic level translation interfaces
- Driver stages for low-power loads
Procurement Notes
Verify component authenticity through official manufacturer channels or authorized distributors. Confirm RoHS compliance status and check for specific environmental declarations such as REACH material data sheets prior to integration. Ensure the ordering suffix matches the required packaging format, such as cut tape or reel, to align with assembly line requirements.
Selection Notes
Select this component when a PNP configuration with integrated biasing is required. The 22 kOhm base resistor value determines the input drive current needed for saturation. Compare against similar models like the MMUN2113LT1G if a different resistance value is necessary. Ensure the 50 V voltage rating and 100 mA current capacity exceed the maximum load requirements of the target application.
Part Context
This part belongs to the MMUN2112L series of pre-biased transistors from onsemi. These devices are designed to replace discrete resistor-transistor networks, reducing board space and assembly costs. The LT1G suffix indicates the specific tape and reel packaging configuration used for automated manufacturing processes.
Replacement Considerations
The MMUN2113LT1G serves as a functional substitute within the same family, differing primarily in its 47 kOhm base resistor value compared to the 22 kOhm value in the MMUN2112LT1G. Both share identical pinouts and electrical ratings.
