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The MMUN2113LT1 is a PNP Bias Resistor Transistor (BRT) from onsemi, housed in an SOT-23 package. It integrates a single transistor with a monolithic bias network consisting of two resistors: a series base resistor and a base-emitter resistor. The device features a collector-emitter voltage (VCEO) of 50 Vdc, a continuous collector current (IC) of 100 mAdc, and a total power dissipation (PD) of 246 mW at 25°C. The typical input resistance (R1) is 47 kOhms, with a resistor ratio (R1/R2) of 1. The minimum DC current gain (hFE) is 80.
Verify the specific ordering suffix against official documentation to confirm packaging details. The LT1 suffix indicates a tape and reel configuration with a quantity of 3000 units. Confirm RoHS compliance status if required for the application, as lead-free variants may carry different suffixes such as G.
Select this component when a PNP digital transistor with a 47 kOhm base resistor is required. Ensure the operating voltage does not exceed 50 Vdc and the collector current remains within the 100 mA limit. Verify thermal requirements, as power dissipation decreases above 25°C ambient temperature.
This part belongs to the MMUN21xxLT1 Series of PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Networks. The series is designed to simplify circuit design by integrating bias resistors directly into the transistor package, thereby reducing system cost and board space compared to discrete solutions.
Direct replacements include other parts within the MMUN21xxLT1 series or equivalent BRTs from other manufacturers with matching electrical characteristics and SOT-23 packaging. Verify pinout compatibility and resistor values before substitution.