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Product Detailed Parameters
- Description：TRANS PREBIAS PNP 50V SOT23-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 and R2
- Transistor Type：PNP - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：47 kOhms
- Resistor - Emitter Base (R2)：47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic：250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：-
- Power - Max：246 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3 (TO-236)
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Overview
The MMUN2113LT1G is a single PNP Bias Resistor Transistor (BRT) manufactured by onsemi. It integrates a transistor with a monolithic bias network consisting of two resistors: a series base resistor and a base-emitter resistor. The device features a typical input resistance of 47 kOhms with a resistor ratio of 1. Key electrical ratings include a maximum collector-emitter voltage (VCEO) of -50 V, a continuous collector current of 100 mA, and a minimum DC current gain (hFE) of 80. Power dissipation is rated at 246 mW. It operates within a temperature range of -55°C to +150°C and is housed in an SOT-23-3 surface-mount package.
Feature Summary
- Integrates a single PNP transistor with a monolithic bias network containing a series base resistor and a base-emitter resistor.
- Designed to replace discrete transistor and external resistor bias networks, reducing component count and board space.
- Provides consistent biasing characteristics due to the integrated resistor ratio.
Applications
- General-purpose switching applications requiring simplified biasing circuits.
- Low-power digital logic interface circuits.
- Signal switching and level shifting in consumer electronics.
Procurement Notes
Verify the specific ordering suffix against official manufacturer documentation to confirm package type and tape/reel specifications. Ensure compliance with RoHS and Pb-Free standards as indicated in the product datasheet. Confirm that the AEC-Q101 qualification status meets automotive application requirements if applicable. Cross-reference the part number with the latest onsemi catalog to avoid obsolete variants.
Selection Notes
Select this component when a PNP BRT with a 47 kOhm input resistance is required for low-current switching. The 50 V voltage rating suits general low-voltage digital systems. Consider the SOT-23-3 package constraints for thermal management given the 246 mW power dissipation limit. Verify that the 100 mA current capability aligns with the load requirements of the target circuit design.
Part Context
This component belongs to the MMUN2113L series of digital transistors from onsemi. The series is designed to simplify circuit design by integrating bias resistors directly with the transistor die. The LT1G suffix typically denotes the specific packaging and environmental compliance configuration provided by the manufacturer.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Consult the manufacturer's cross-reference guide for verified alternatives.
