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The MMUN2113LT3G is a PNP Bias Resistor Transistor (BRT) from onsemi, housed in an SOT-23 surface-mount package. It integrates a single transistor with a monolithic bias network consisting of two resistors: a series base resistor (R1) and a base-emitter resistor (R2). The device features a collector-emitter voltage (VCEO) of -50 Vdc, a collector-base voltage (VCBO) of 50 Vdc, and a maximum continuous collector current (IC) of 100 mAdc. Electrical characteristics include a minimum DC current gain (hFE) of 80 at IC = 5.0 mA and VCE = 10 V, and a typical collector-emitter saturation voltage (VCE(sat)) of 0.25 Vdc at IC = 10 mA. Thermal dissipation is rated at 246 mW at 25°C ambient temperature.
Verify the specific ordering suffix against official documentation to confirm packaging quantity and lead-free status. The 'LT3' designation typically corresponds to a 10,000-unit tape and reel configuration, while 'LT1' indicates 3,000 units. Confirm RoHS compliance requirements for the target application before procurement.
Select this component when a PNP digital transistor with a 47 kΩ series base resistor and 47 kΩ base-emitter resistor is required. Ensure the operating voltage does not exceed the 50 Vdc limits and that the thermal dissipation requirements fit within the SOT-23 package constraints. Verify compatibility with wave or reflow soldering processes.
This part belongs to the MMUN21xxLT1 Series of Bias Resistor Transistors manufactured by onsemi. The series includes various resistor combinations for different biasing needs. The MMUN2113 variant specifically utilizes equal 47 kΩ resistors for both R1 and R2, offering a unity ratio for standard biasing applications.
Direct substitutes within the same family include MMUN2113LT1G (3,000 units/reel) and MMUN2113LT3 (non-Pb-free version). Cross-manufacturer equivalents should be verified for pinout compatibility and electrical parameter matching.