ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：TRANS PREBIAS PNP 50V SOT23-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 and R2
- Transistor Type：PNP - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：47 kOhms
- Resistor - Emitter Base (R2)：47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic：250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：-
- Power - Max：246 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3 (TO-236)
Download product information
Overview
The MMUN2113LT3G is a PNP Bias Resistor Transistor (BRT) from onsemi, integrating a single transistor with a monolithic bias network. It operates with a maximum collector-emitter voltage of -50 V and supports a continuous collector current of 100 mA. The device features a typical input resistance of 47 kOhms and a resistor ratio of 1. Packaged in an SOT-23-3 surface-mount case, it delivers a minimum DC current gain (hFE) of 80. Power dissipation is rated at 225 mW, with an operating temperature range spanning from -55°C to +150°C.
Feature Summary
- Integrates a PNP transistor with a monolithic two-resistor bias network to replace discrete components.
- Designed for high-density surface-mount applications using the compact SOT-23 package.
- Provides stable biasing characteristics through built-in series base and base-emitter resistors.
Applications
- Switching circuits requiring integrated bias networks
- High-density digital logic interface applications
- General-purpose switching in consumer electronics
Procurement Notes
Verify the specific suffix LT3G against official datasheets to confirm packaging details, as variations exist within the MMUN2113L family. Ensure compatibility with AEC-Q101 automotive standards if required by the design. Cross-reference pinouts and thermal specifications with the manufacturer's latest documentation before finalizing procurement.
Selection Notes
Select this component when a PNP BRT with a 47 kOhm input resistance and unity resistor ratio is required. Compare power dissipation ratings between LT1G and LT3G variants to ensure adequate thermal headroom. Verify that the 50V voltage rating meets the circuit's maximum operating conditions.
Part Context
This part belongs to the MMUN2113L series of Bias Resistor Transistors. It serves as a direct replacement for discrete transistor and resistor combinations, simplifying PCB layout. The series includes various configurations such as NPN types and different resistance values to support diverse circuit requirements.
Replacement Considerations
The MUN2113T1 is a documented alternative within the same product family. Verify package compatibility and electrical parameter alignment before substitution.
FAQ
What is the typical input resistance value?
The typical input resistance is 47 kOhms.
What is the resistor ratio for this device?
The typical resistor ratio is 1.
Is this component suitable for automotive applications?
Yes, the MMUN2113LT1G variant is qualified to AEC-Q101 standards.
